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Company BLOG
Infineon Launches N-Channel OptiMOS™ Power MOSFET—IPB038N12N3G
Latest company news about Infineon Launches N-Channel OptiMOS™ Power MOSFET—IPB038N12N3G

Today, Infineon introduces the N-channel OptiMOS™ power MOSFET-IPB038N12N3G is the leading power MOSFET offering the highest power density and energy-efficient solutions. Ultra-low gate and output charges and the lowest on-resistance in a small package size make them ideal for meeting the demanding requirements of voltage regulator solutions in server, datacom and telecom applications. Ultra-fast switching control FETs and low EMI synchronous FETs provide easy-to-design solutions. Infineon's N-channel OptiMOS™ power MOSFETs provide excellent gate charge and are optimised for DC-DC conversion.

 

Introduction

The 120V OptiMOS™ family offers the industry's lowest on-resistance and fastest switching performance for a wide range of applications, enabling excellent performance. 120V OptiMOS™ technology opens up new possibilities to help achieve optimised solutions.

 

Feature Description

Superior switching performance

World's lower (R Ds(on))

Very low Qg and Qgd

Outstanding gate charge x R DS(on) products (FOM)

RoHS compliant - halogen free

MSL1 rating 2

 

Specification

Manufacturer: Infineon

Product Category: MOSFETs

Technology: Si

Mounting Style: SMD/SMT

Package / Case: D2PAK-3 (TO-263-3)

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds-Drain-source breakdown voltage: 120 V

Id-Continuous drain current: 120 A

Rds On-drain on-resistance: 3.2 mOhms

Vgs - gate-source voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 2 V

Qg-gate charge: 211 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 300 W

Channel mode: Enhancement

Trademark: OptiMOS

Series: OptiMOS 3

Configuration: Single

Fall time: 21 ns

Forward transconductance - min: 83 S

Height: 4.4 mm

Length: 10 mm

Product Type: MOSFET

Rise Time: 52 ns

Factory Package Quantity: 1000

Sub Category: MOSFETs

Transistor Type: 1 N-Channel

Typical Off Delay Time: 70 ns

Typical turn-on delay time: 35 ns

Width: 9.25 mm

 

About Infineon Technologies

Infineon is a leading global semiconductor technology company committed to creating a more convenient, safe and environmentally friendly world. We offer a comprehensive range of semiconductor solutions that enable efficient energy management, smart mobility, and secure, seamless communications that connect the real and digital worlds.

Pub Time : 2024-07-02 09:44:32 >> News list
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