logo
Home News

company blog about Infineon MOSFET Power Transistor IPB017N10N5LF OptiMOS™ 5 100 V Linear Field-Effect Transistor

Certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
Customer Reviews
Shipped very fast,and was very helpful,New and Original,would highly recommend.

—— Nishikawa From Japan

Professional and fast service,acceptable prices for goods. excellent communication,product as expected. I highly recommend this supplier.

—— Luis From United States

High Quality and Reliable Performance: "The electronic components we received from [ShenZhen Mingjiada Electronics Co.,Ltd.] are of high quality and have shown reliable performance in our devices."

—— Richardg From Germany

Competitive Pricing: The pricing offered by is very competitive, making it an excellent choice for our procurement needs.

—— Tim From Malaysia

The customer service provided by is excellent. They are always responsive and helpful, ensuring our needs are met promptly.

—— Vincent From Russia

Great prices, fast delivery, and top-notch customer service. ShenZhen Mingjiada Electronics Co.,Ltd. never disappoints!

—— Nishikawa From Japan

Reliable components, fast shipping, and excellent support. ShenZhen Mingjiada Electronics Co.,Ltd is our go-to partner for all electronic needs!

—— Sam From United States

High-quality parts and a seamless ordering process. Highly recommend ShenZhen Mingjiada Electronics Co.,Ltd for any electronics project!

—— Lina From Germany

I'm Online Chat Now
Company BLOG
Infineon MOSFET Power Transistor IPB017N10N5LF OptiMOS™ 5 100 V Linear Field-Effect Transistor
Latest company news about Infineon MOSFET Power Transistor IPB017N10N5LF OptiMOS™ 5 100 V Linear Field-Effect Transistor

Mingjiada Electronics: Genuine Infineon IPB017N10N5LF OptiMOS™ 5 Linear Power MOSFETs

 

IPB017N10N5LF Overview

The IPB017N10N5LF is an N-channel enhancement-mode power MOSFET from Infineon’s OptiMOS™ 5 Linear FET series, specifically designed for linear mode applications such as hot-swapping, electronic fuses (e-fuses), and battery protection. It achieves a breakthrough by combining the ultra-low on-resistance of trench MOSFETs with the wide safe operating area (SOA) of planar MOSFETs, delivering an extremely low RDS(on) of 1.7 mΩ (@10 V) at a 100 V voltage rating. It also offers excellent linear region stability and fault tolerance, making it an ideal choice for high-power-density, high-reliability power supply systems. Mingjiada Electronics offers brand-new, genuine products in stock for immediate shipment, supporting both sample and bulk purchases to provide customers with a stable and reliable supply of core power devices.

 

IPB017N10N5LF Specifications

1. Electrical Performance

Drain-Source Breakdown Voltage (VDS): 100V

On-resistance (RDS(on)): Max. 1.7 mΩ (VGS=10 V, ID=100 A)

Continuous drain current (ID): 256 A (at 25°C, Tc)

Pulse drain current (IDpulse): 720 A (tp=10 ms)

Gate Charge (QG): Typical 168 nC (at 10 V)

Output Capacitance (COSS): Typical 1810 pF

Total Power Dissipation (Ptot): 375W (at 25°C, Tc)

Threshold Voltage (VGS (th)): 3V

Operating Junction Temperature (Tj): -55°C to +175°C

2. Package and Physical Characteristics

Package Type: PG-TO263-7 (D²-PAK 7-pin)

Pin Configuration: Pin 1 = Gate, Pin 4 + Heat Sink Pad = Drain, Pins 2/3/5/6/7 = Source (multi-source parallel)

Thermal Resistance (RthJC): 0.4 K/W, low thermal resistance design, excellent thermal performance

Environmental Certification: Lead-free, halogen-free, RoHS compliant

3. Key Features

Wide Safe Operating Area (SOA): Stable operation in linear mode, withstands high current surges, suitable for hot-swapping and short-circuit protection

Ultra-low on-resistance: 1.7 mΩ RDS(on), significantly reduces on-state power dissipation and improves system efficiency

Excellent gate characteristics: Low gate charge, fast switching speed, suitable for high-frequency and linear control applications

Avalanche withstand capability: 100% avalanche tested, with strong surge and overvoltage resistance

JEDEC certified: Passes J-STD20 and JESD22 reliability tests, ensuring industrial-grade quality

 

IPB017N10N5LF Advantages

Linear Mode-Specific Design: Optimized for hot-swapping and e-fuses; wide SOA ensures stable operation in the linear region and prevents secondary breakdown

Ultra-Low On-Resistance: 1.7 mΩ RDS(on) at 100 V, industry-leading, significantly reducing on-state losses and heat generation

High Current Capacity: 256 A continuous current and 720 A pulse current, meeting the demands of high-power systems

Superior Thermal Performance: TO263-7 package + low thermal resistance design, suitable for high-power-density and compact space applications

High reliability: Industrial-grade wide temperature range, avalanche-resistant, and JEDEC-certified, ensuring long-term stable system operation

 

IPB017N10N5LF Typical Applications

Hot-swap controllers: Hot-swap modules for servers, communication equipment, and industrial power supplies, limiting inrush current

Electronic Fuses (e-Fuses): Battery Management Systems (BMS) and Power Distribution Units (PDUs), providing fast overcurrent protection

Battery Protection Circuits: 48V/72V battery packs, offering short-circuit, overcurrent, and overvoltage protection

High-Power Load Switches: Power control for industrial equipment, motor drives, and renewable energy storage systems

Synchronous Rectification: High-efficiency synchronous rectification applications in server power supplies, telecom power supplies, and adapters

 

Shenzhen Mingjiada Electronics Co., Ltd. maintains a long-term stock of Infineon IPB017N10N5LF OptiMOS™ linear field-effect transistors. Leveraging our professional component supply chain capabilities, we provide customers with comprehensive procurement support.

Pub Time : 2026-03-28 10:16:16 >> News list
Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Mr. Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

Send your inquiry directly to us (0 / 3000)