Shenzhen Mingjiada Electronics Co., Ltd. is a specialist supplier of electronic components, offering long-term stock availability of Infineon's high-performance N-channel power MOSFET – the IPB117N20NFD. This product belongs to the OptiMOS™ FD series, renowned for its exceptional performance and high reliability, making it widely applicable across diverse high-power applications.
IPB117N20NFD Product Overview
The IPB117N20NFD is an N-channel power MOSFET transistor from Infineon Technologies, utilising advanced OptiMOS™ FD (Fast Diode) technology.
This 200V IPB117N20NFD belongs to the OptiMOS™ FD series, specifically optimised for body diode hard switching.
The IPB117N20NFD utilises a TO-263-3 package (also known as D2PAK), suitable for surface mount technology, facilitating efficient soldering and assembly on automated production lines.
IPB117N20NFD Key Performance Parameters
Drain-Source Voltage (VDS): 200V
Maximum On-Resistance (FOS(uv)): 11.7mΩ
Continuous Drain Current (ID): 84A (at Tc=25°C)
Pulse Drain Current: 336A (at Tc=25°C, I0=67A, R0B=25Ω)
Reverse Diode Peak dv/dt: 60kV/μs (at ln=160A, V0B=100V, dir/t=1500A/μs, Tjmax=175°C)
Gate-Source Voltage (VGS): -20V to 20V
Power Dissipation (Pd): 300W (at Tc=25°C)
Operating Temperature Range: -55°C to 175°C
Product Features
The IPB117N20NFD integrates multiple advanced technologies, offering the following key characteristics:
Enhanced Robustness: Optimised for endurance under body diode hard switching, improving system reliability in harsh switching environments.
Fast Diode Technology: Incorporates low Qrr fast diode (FD) technology, significantly reducing reverse recovery charge and time for superior performance in applications such as switching power supplies.
Energy Efficiency and Power Density: With industry-leading Rds(on) and Qg parameters, the IPB117N20NFD achieves higher system efficiency and power density, enabling designers to reduce product footprint.
Environmental Compliance and Safety: RoHS-compliant and halogen-free, the IPB117N20NFD meets stringent environmental requirements for modern electronics while delivering excellent temperature characteristics and long-term stability.
Application Scenarios
The IPB117N20NFD finds extensive application across multiple domains, including:
Telecommunications Equipment: Delivering high-efficiency power management.
Industrial Power Supplies: Ensuring stable power delivery.
Class D Audio Amplifiers: Enhancing performance in audio devices.
Motor Control: Precisely regulating motor operation.
DC-AC Inverters: Enabling efficient power conversion.
Package Type
The IPB117N20NFD utilises a PG-TO 263-3 package, offering space-saving advantages alongside ease of installation and handling.
Summary
The Infineon IPB117N20NFD power MOSFET supplied by Mingjiada Electronics represents a high-performance, versatile 200V N-channel MOSFET. Its low on-resistance, high switching speed, and low turn-on voltage provide a reliable solution for diverse high-power applications. Whether in telecommunications, industrial power supplies, or audio equipment, the IPB117N20NFD meets user demands for high-performance power MOSFETs.
Contact Us:
Contact: Mr Chen
Telephone: +86 13410018555
Email: sales@hkmjd.com
Website: www.integrated-ic.com
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