company blog about INFINEON S26HS512TGABHI003 High-Density SEMPER™ NOR Flash Memory IC

INFINEON S26HS512TGABHI003 High-Density SEMPER™ NOR Flash Memory IC

Product Description of S26HS512TGABHI003
S26HS512TGABHI003 is a member of the SEMPER™ NOR Flash Memory family from Infineon and boasts a density of 512 Mbit. This device operates on a HYPERBUS interface with a bandwidth of 400 MByte/s and an operating voltage of 1.8 V. It features a lightening-fast interface frequency of 200 MHz (DDR) and is enclosed in a robust Infineon PG-BGA-24 package.

The Infineon SEMPER™ Flash family of products are high-speed CMOS, MIRRORBIT™ NOR Flash devices that are compatible with the JEDEC JESD251 eXpanded SPI (xSPI) specification. SEMPER™ Flash is designed for Functional Safety with development according to ISO 26262 standard to achieve ASIL-B compliance and ASIL-D readiness.

Parametrics of S26HS512TGABHI003
Density：512 MBit
Family：HS-T
Interface Bandwidth：400 MByte/s
Interface Frequency：200 MHz
Interfaces：HYPERBUS
Lead Ball Finish：Sn/Ag/Cu
Operating Temperature：-40 °C - 85 °C
Operating Voltage：1.8 V 1.7 V 2 V
Peak Reflow Temp：260 °C

Feature of S26HS512TGABHI003
Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell
Sector architecture options
Page Programming buffer of 256 or 512 bytes
OTP secure silicon region (SSR) of 1024 bytes (32 × 32 bytes)
HYPERBUS™ interface
SEMPER™ Flash with HYPERBUS™ interface devices support default boot in legacy SPI (x1) or HYPERBUS™interface (x8)
AutoBoot enables immediate access to the memory array following power-on
Hardware reset through CS# signaling method (JEDEC) AND individual RESET# pin
Serial flash discoverable parameters (SFDP) describing device functions and features
Device identification, manufacturer identification and unique identification