Shenzhen Mingjiada Electronics Co., Ltd. supplies Infineon Technologies Discrete Semiconductors IGLR60R190D1XUMA1 CoolGaN™ 600V Gate Injection Technology (GIT) High Electron Mobility Transistors (HEMTs) with fast on and off speeds and minimal switching losses.
Introduction
This family of GaN enhancement mode power transistors is available in the ThinPAK 5x6 surface mount package and is ideal for applications requiring a compact device that does not require a heat sink. The Infineon Technologies CoolGaN™ 600V GIT HEMTs have a small size of 5mm x 6mm2 and a thin height of 1mm, making them ideally suited for achieving high power densities.
Features
- Enhancement mode transistor, normally closed switch
- GaN HEMT in small leadless SMD package
- GaN custom certified
- Ultra-fast switching speed
- No reverse recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Excellent commutation tolerance
- Improved system efficiency
- Increased power density
- Supports higher operating frequencies
- Lower system cost
- Reduced EMI
- JEDEC compliant (JESD47 and JESD22) for industrial applications
- Lead-free, halogen-free, RoHS compliant
Technical Data
Product Category: MOSFETs
Technology: GaN
Mounting Style: SMD/SMT
Package / Case: TSON-8
Transistor polarity: N-Channel
Number of Channels: 1 Channel
Vds - drain-source breakdown voltage: 800 V
Id-Continuous drain current: 12.8 A
Rds On-drain on-resistance: 190 mOhms
Vgs - gate-source voltage: - 10 V, + 10 V
Vgs th-Gate-source threshold voltage: 900 mV
Qg-gate charge: 3.2 nC
Minimum operating temperature: - 40 C
Maximum operating temperature: + 150 C
Pd-power dissipation: 55.5 W
Channel mode: Enhancement
Trademark: CoolGaN
Series: CoolGaN 600V
Configuration: Single
Fall time: 14 ns
Rise Time: 12 ns
Typical Off Delay Time: 13 ns
Typical turn-on delay time: 16 ns
Company Home: www.hkmjd.com
Your message must be between 20-3,000 characters!
