company blog about IPG20N04S4L-11 Infineon Dual N-Channel Automotive Grade MOSFETs, 11.6mΩ Ultra Low On-Resistance

IPG20N04S4L-11 dual N-channel automotive-grade MOSFET - Shenzhen Mingjiada Electronics Co,Ltd.In Stock

In automotive electronics and high-efficiency power supply designs, the IPG20N04S4L-11 is one of the top choices for engineers due to its excellent performance. As a dual N-channel automotive-grade MOSFET from Infineon, the IPG20N04S4L-11 uses advanced OptiMOS technology to provide an ultra-low on-resistance (RDS(on)) of 11.6mΩ, which significantly reduces power consumption and improves system efficiency.

Product Description Of IPG20N04S4L-11
The IPG20N04S4L-11 is a dual N-channel enhancement power MOSFET from Infineon, belonging to the OptiMOS™-T2 family, designed for automotive electronics and industrial control applications. Available in the PG-TDSON-8-4 package (5 x 6 mm), the device features extremely low on-resistance (RDS(on) = 11.6 mΩ) and supports a 40 V drain-source voltage (VDS) and a 20 A continuous drain current (ID), making it suitable for applications such as high-efficiency power switching, motor drives and body control modules (BCMs).38 The IPG20N04S4L is a dual N-channel enhancement power MOSFET from Infineon, part of the OptiMOS™-T2 family, designed for automotive electronics and industrial control applications.

The IPG20N04S4L-11 complies with AEC-Q101 certification, operates stably over a wide temperature range from -55°C to +175°C, and supports 260°C peak reflow soldering to meet the high reliability requirements of automotive electronics manufacturing.3 The IPG20N04S4L-11 is designed to meet the needs of automotive electronics manufacturing.

Key Features Of IPG20N04S4L-11
Dual N-channel MOSFETs: The IPG20N04S4L-11 integrates two independent MOSFETs to save PCB space.
Ultra-low on-resistance: RDS(on) = 11.6mΩ (typical) to reduce power loss.
High current capability: 20A continuous drain current (ID) for high power switching applications.
Automotive Grade Approval: IPG20N04S4L-11 complies with AEC-Q101 and supports MSL1 (260°C reflow soldering).
Low gate charge (Qg): optimises switching efficiency for high frequency PWM control.
100% Avalanche Test: Enhances device reliability under transient high voltage.
RoHS compliant: environmentally friendly lead-free design.

Specification
Model: IPG20N04S4L-11
Manufacturer: Infineon
Package: PG-TDSON-8-4 (5 x 6mm)
Number of channels: 2 (dual N-channel)
Drain-source voltage (VDS): 40V
Continuous drain current (ID): 20A
On-resistance (RDS(on)): 11.6mΩ (typical)
Threshold voltage (VGS(th)): 1.7V
Input capacitance (Ciss): 1530pF (@25V VDS)
Operating Temperature Range: -55°C ~ +175°C
Compliance Standard: AEC-Q101, RoHS

Specification highlights of the IPG20N04S4L-11 include:
Dual N-channel design: saves space and simplifies circuit layout.
40V withstand voltage: suitable for 12V/24V automotive systems and industrial applications.
11.6mΩ ultra-low RDS(on) (at VGS=10V): reduces conduction losses and improves energy efficiency.
AEC-Q101 compliant: meets stringent automotive grade reliability requirements.
Optimised switching performance: combines high-speed switching with low electromagnetic interference (EMI).

IPG20N04S4L-11 is widely used in:
Automotive DC-DC converters
Motor drive modules
Battery management systems (BMS)
Load switch and power distribution units

Currently, Mingjiada, as a well-known component supplier, continuously and stably supplies IPG20N04S4L-11, providing customers with original genuine products and technical support.

Contact Information:
Tel: +86 13410018555
Email: sales@hkmjd.com
Website: www.integrated-ic.com