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Long-term Supply and Buyback of Infineon IQE046N08LM5: A High-Efficiency MOSFET Designed Specifically for Telecommunications and Server DC-DC Converters
Latest company news about Long-term Supply and Buyback of Infineon IQE046N08LM5: A High-Efficiency MOSFET Designed Specifically for Telecommunications and Server DC-DC Converters

Mingjiada Electronics has been supplying and purchasing used Infineon IQE046N08LM5 devices for a long time. This device is specifically optimized for high-power-density DC-DC converter applications in telecommunications and data center servers. Please feel free to contact us for more information.

 

IQE046N08LM5 Product Overview

The IQE046N08LM5 is an 80V N-channel logic-level power MOSFET from Infineon’s OptiMOS™ 5 series, featuring an innovative PQFN 3.3×3.3 Source-Down package. Offering industry-leading, ultra-low on-resistance (RDS(on)) at 25°C and exceptional thermal performance, this device is an ideal choice for high-power-density switching power supply (SMPS) products, particularly for DC-DC converter applications in telecommunications and data center servers.

 

IQE046N08LM5 Key Technical Advantages

Revolutionary Source-Down Technology

OptiMOS™ Source-Down utilizes internal silicon flip-chip technology, offering significant advantages over traditional packaging: better thermal performance, higher power density, and greater layout flexibility. This design shortens the chip’s heat dissipation path and reduces thermal resistance, effectively enhancing system reliability.

Ultra-Low On-Resistance

The IQE046N08LM5 features a maximum on-resistance (RDS(on)) of just 4.6 mΩ at VGS = 10 V, representing a reduction of approximately 30% compared to products using similar technologies. Low on-resistance translates to lower conduction losses and reduced heat generation, directly improving power conversion efficiency.

Logic-Level Drive

This device supports logic-level drive, allowing for lower gate drive voltages (compatible with 4.5V drive), which reduces gate charges Qrr and QOSS while simplifying gate driver selection and design.

Optimized Parallel Configuration

Featuring a Center-Gate package design, this device is specifically optimized for parallel operation of multiple MOSFETs, helping to simplify parallel configurations and improve current sharing.

 

IQE046N08LM5 Key Parameters

Drain-Source Voltage (VDS): 80 V

Continuous Drain Current (ID @25°C): 99 A

Peak Drain Current (IDpuls): 396 A

On-resistance RDS(on) (@10V, max): 4.6 mΩ

On-resistance RDS(on) (@4.5V, max): 5.9 mΩ

Gate charge Qg (typical @10V): 38 nC

Gate charge Qg (@4.5V): 19 nC

Power dissipation (Ptot): 100 W

Operating temperature range: -55°C to +175°C

Package type: PQFN 3.3×3.3 Source-Down

 

IQE046N08LM5 Key Applications

Telecom and Server DC-DC Converters

The IQE046N08LM5 is specifically designed for high-performance SMPS products and serves as the core power device in DC-DC converter modules for telecom equipment and data center servers. With the continued growth in power demand for AI servers and data centers (the compound annual growth rate for AI server power supplies reaches 18.8%), the need for high-efficiency, high-power-density power MOSFETs is becoming increasingly urgent.

Synchronous Rectification

This device is optimized for synchronous rectification applications in high-performance SMPS. Its low on-resistance and low gate charge enable it to effectively reduce rectification losses and improve overall power supply efficiency.

 

Why Choose Mingjiada?

Shenzhen Mingjiada Electronics Co., Ltd. has long specialized in the supply and recycling of power semiconductor devices. For the IQE046N08LM5, we offer:

Brand-new, genuine stock: Ensuring product quality and traceability

Long-term, stable supply: Meeting bulk procurement and urgent restocking needs

Professional recycling services: We offer long-term recycling of the IQE046N08LM5 and similar power devices for factories, research institutes, and end customers, providing flexible inventory management solutions

 

Conclusion

With its OptiMOS™ 5 technology and innovative Source-Down packaging, the Infineon IQE046N08LM5 has set a new performance benchmark in the 80V power MOSFET sector. Whether used in telecommunications DC-DC converters or server power modules, it helps engineers achieve higher power density, lower system losses, and optimized thermal design.

 

Mingjiada Electronics supports customers in quickly obtaining this high-performance power device through its high-quality supply chain services. Please feel free to contact us by phone or email for inquiries regarding supply and recycling.

Pub Time : 2026-08-01 10:26:46 >> News list
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