company blog about LPDDR5 Memory IC MT62F1G64D8WT-031 XT:B_MT62F1G64D8WT-031 AV XT:B Dynamic Random Access Memory

Shenzhen Mingjiada Electronics Co., Ltd. new and original [Supply] [Acquisition] LPDDR5 memory IC MT62F1G64D8WT-031 XT:B_MT62F1G64D8WT-031 AV XT:B Dynamic Random Access Memory LPDDR5 64G 1GX64 FBGA

Introduction

Micron's LPDDR5 DRAM for mobile devices and artificial intelligence (AI) is designed to meet the demands of 5G networks. The DRAM supports 5G smartphones to process data at peak speeds of up to 6.4Gbps. This is critical to prevent 5 G data bottlenecks. LPDDR 5 DRAM meets these requirements with a 50 per cent increase in data access speeds. The device also delivers more than 20 per cent more power compared to previous generations.

Product Features

• Micron's advanced 1y nm node with 12GB capacity and 6.4Gbps data speeds, improving overall DRAM design
• More than 50% bandwidth improvement to enhance performance in next-generation flagship smartphones such as 5G and AI
• Enables next-generation features on Edge+ smartphones
• More than 20 per cent improvement in power efficiency compared to LPDDR4, so flagship smartphones can run longer between charges

Specification

Chipset validation: N/A

Cycle time: 6400 MB/s

Storage capacity: 64Gb

FBGA Code: D9ZNT

Operating Temperature: -25°C ~ +85°C

Technology: LPDDR5

Width: x64

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