Infineon’s second-generation 750V CoolSiC™ MOSFET G2 powers AI servers; Mingjiada Electronics is seeking to purchase the following models at premium prices
Introduction: With the explosion in AI computing power, new opportunities are emerging for power semiconductors
Driven by the rapid iteration of large-scale artificial intelligence models and the exponential growth in computing power demands within data centres, the power consumption of AI servers is rising sharply. The power output of a single AI server has surged from the traditional few hundred watts to several kilowatts or even higher, posing unprecedented challenges to the power density, conversion efficiency and thermal management capabilities of server power supplies.
Infineon’s second-generation 750V CoolSiC™ MOSFET G2 series, utilising industry-leading silicon carbide (SiC) trench technology, provides high-performance power semiconductor solutions for AI server power supplies. As a specialist distributor of electronic components, Shenzhen Mingjiada Electronics Co., Ltd. has long been actively sourcing original factory stock of this series at premium prices from around the world, providing reliable component supply chain support for the AI server industry chain.
I. CoolSiC™ MOSFET G2: Second-Generation SiC Technology Tailored for AI Servers
Infineon’s second-generation 750V CoolSiC™ MOSFET is built upon over 20 years of silicon carbide technology expertise, delivering significant improvements over the previous G1 generation in terms of on-resistance, switching losses, thermal performance and reliability.
Key Advantages
1. Ultra-low on-resistance (RDS(on))
The CoolSiC™ MOSFET 750V G2 offers ultra-low on-resistance as low as 4 mΩ, significantly reducing conduction losses and improving power conversion efficiency. Its industry-leading RDS(on) × Qfr and excellent RDS(on) × Qoss performance effectively reduce switching losses in both hard-switching and soft-switching topologies.
2. Outstanding Switching Performance
Compared to the previous generation, the second-generation CoolSiC™ MOSFETs offer a 25% to 30% increase in switching speed and a 30% to 40% reduction in switching losses. The figure of merit (FOM) has improved by 20% to 35% compared to the previous generation.
3. Outstanding Resistance to Parasitic Turn-On
This series combines a high threshold voltage VGS(th) (typically 4.5 V at 25 °C) with an ultra-low QGD/QGS ratio, enhancing immunity to parasitic turn-on (PTO) and ensuring reliable operation under complex operating conditions.
4. Extended Gate Drive Capabilities
Support for static gate voltages of up to –7 V and transient gate voltages of up to –11 V provides engineers with greater design margin.
5. Outstanding Thermal Performance
Featuring an innovative top-cooled Q-DPAK package, it offers excellent thermal performance and reliability, with a power dissipation capacity of up to approximately 20 W. The enhanced thermal performance supports operating temperatures of up to 200 °C.
6. High Reliability Assurance
100% avalanche testing
Fully compliant with the AEC Q101 automotive standard and the JEDEC industrial standard
Utilises Infineon’s proprietary .XT diffusion bonding technology
Key Technical Specifications
Drain-source breakdown voltage: 750 V
On-resistance range: 4 mΩ to 78 mΩ
Continuous drain current: 29 A to 357 A
Threshold voltage (typical): 4.5 V @ 25 °C
Operating temperature range: -55 °C to 175 °C
II. Empowering AI Servers: The Ideal Choice for High-Power-Density Power Supplies
AI server power supplies (SMPS) place extremely high demands on power density and efficiency. The second-generation 750V CoolSiC™ MOSFET G2 delivers outstanding performance in hard-switching topologies such as totem-pole, active neutral-point clamping (ANPC), Vienna rectifier and fly-across capacitor (FCC). Meanwhile, the significantly reduced output capacitance (Coss) enables higher-frequency switching operation in soft-switching topologies such as CLLC, double active bridge (DAB) and LLC.
This series is widely used in:
AI server power supply units (PSUs)
AC-DC power conversion for telecommunications infrastructure
Photovoltaic inverters
Electric vehicle charging infrastructure
Uninterruptible power supply (UPS) systems
Energy storage systems (ESS)
III. Mingjiada Electronics Seeks to Purchase at Premium Prices: Full Range of CoolSiC™ MOSFET G2 750V Models
Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned authorised independent distributor of electronic components, is seeking to purchase original stock of Infineon’s second-generation 750V CoolSiC™ MOSFET G2 series at premium prices on a long-term basis from around the world.
List of Models Sought
Mingjiada Electronics is currently seeking to purchase the following industrial-grade and automotive-grade CoolSiC™ MOSFET G2 750V models worldwide:
Automotive-grade Q-DPAK package:
AIMDQ75R016M2H
AIMDQ75R025M2H
AIMDQ75R060M2H
Industrial-grade Q-DPAK packages:
IMDQ75R004M2H
IMDQ75R007M2H
IMDQ75R016M2H
IMDQ75R025M2H
IMDQ75R060M2H
Further extended models
In addition, the Infineon CoolSiC™ MOSFET 750V G2 series also offers products in D2PAK 7-pin packages, with on-resistances ranging from 7, 25, 33, 40, 50 to 60 mΩ, as well as Q-DPAK packages covering 4, 7, 20, 33, 40 and 50 mΩ. Relevant models include, but are not limited to:
IMBG75R025M2H (D2PAK-7, 25 mΩ, industrial grade)
IMBG75R007M2H (D2PAK-7, 7 mΩ)
Mingjiada Electronics is also seeking to purchase the full range of the above products, as well as other Infineon CoolSiC™ product series such as power modules and silicon carbide diodes, on a long-term basis.
Conclusion
Infineon’s second-generation 750V CoolSiC™ MOSFET G2, with its outstanding performance, is becoming a core power device in sectors such as AI server power supplies, electric vehicle charging and renewable energy. Mingjiada Electronics is consistently seeking to purchase the full range of the above models at competitive prices from suppliers worldwide; customers with stock are welcome to contact us at any time to discuss opportunities.
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