company blog about Mingjiada Electronics Supplies Infineon Power MOSFET Transistors, High Performance Power Solutions

Mingjiada Electronics Supplies Infineon Power MOSFET Transistors, High Performance Power Solutions

Shenzhen Mingjiada Electronics Co., Ltd. — Long-term supplier of various high-performance MOSFET products from Infineon, including: IRFP4110PBF, IRFB3306GPBF, BSZ440N10NS3G, BSZ520N15NS3G, BSC052N08NS5, etc., providing core power device solutions for industrial power supplies, new energy, and motor drive applications.

The Infineon power MOSFET series products provided by Mingjiada Electronics cover a wide range of voltage, current ratings, and application requirements. Below is the relevant information for the supplied products:
1. IRFP4110PBF: High-current power switch
Basic parameters:Featuring a TO-247-3 package and N-channel design, it has a drain-source breakdown voltage of 100V and a continuous drain current capacity of 180A, with a low on-resistance of 3.7mΩ.
Switching characteristics: Gate charge (Qg) 150nC, supporting a wide gate-source voltage range from -20V to +20V.
Thermal Performance: Maximum power dissipation of 370W at 25°C, operating temperature range from -55°C to +175°C.
Application Advantages: Specifically designed for efficient synchronous rectification and high-current switching power supplies, it performs exceptionally well in UPS systems and high-frequency power conversion applications.

2. IRFB3306PBF: High-efficiency synchronous rectification
Package and electrical characteristics: TO-220 package, 60V drain-source voltage, 160A continuous drain current, on-resistance as low as 3.3mΩ.
Dynamic performance: Gate charge 85nC, supports ±20V gate-source voltage, fast switching speed, suitable for high-frequency applications.
Thermal Management: Maximum power dissipation of 230W, junction-to-case thermal resistance of only 0.65°C/W, excellent heat dissipation performance.
Application Scenarios: Especially suitable for synchronous rectification circuits in server power supplies and industrial-grade SMPS, enhancing the dV/dt capability of the body diode.

3. BSZ440N10NS3G: Next-generation low-loss device
Technical breakthrough: 100V/70A specification, OptiMOS technology achieves ultra-low on-resistance (typical value 4.4mΩ).
Switching efficiency: Significantly optimised Qg reduces switching losses and improves high-frequency power supply efficiency.
Package advantages: Uses standard TO-263 packaging, compatible with automated assembly processes.
Application value: particularly suitable for DC-DC converters and electric tool power supply designs (Note: parameter characteristics are based on the common technology of Infineon's new-generation BSZ series).

4. BSC052N08NS5 & BSZ520N15NS3G: Medium-voltage high-efficiency combination
BSC052N08NS5 Features: 80V/100A specification, on-resistance as low as 5.2mΩ, with optimised Qgs design.
BSZ520N15NS3G Features: 150V/70A specification, 15V gate drive, balancing conduction loss and switching performance.
Technical Commonality: Both adopt the SuperSO8 package, offering excellent thermal performance and high power density.
Application Combination: Provides perfect voltage coverage in electric vehicle OBC and industrial motor drive applications (Note: BSZ series characteristics are based on common analysis from Infineon technical documentation).

For more information on Infineon power MOSFET transistors or to inquire about specific model prices, please visit the Mingjiada Electronics official website (https://www.integrated-ic.com/) to check supply details.