With the power consumption of a single NVIDIA B200 graphics card exceeding 1,000W and the Rubin platform approaching 2,300W, power density in AI data centers is growing exponentially. Traditional silicon-based power devices are nearing their physical limits, and achieving higher efficiency, lower losses, and more compact thermal designs within limited PCB space has become the primary challenge facing server power supply engineers.
As a leading global supplier of electronic components, Shenzhen Mingjiada Electronics Co., Ltd. (hereinafter referred to as “Mingjiada Electronics”) is pleased to announce the availability of ROHM Semiconductor’s latest generation of TOLL-packaged SiC MOSFETs, providing highly competitive power conversion solutions for AI server power supplies, ESS energy storage, and photovoltaic inverters.
I. The Transformation of AI Server Power Supplies: SiC Becomes a Core Necessity
The widespread adoption of generative AI has driven continuous upgrades in GPU performance, leading to exponential growth in data center power consumption. Traditional 48V low-voltage power supply architectures suffer from high losses and significant thermal management challenges, making ±400V/800V HVDC (High-Voltage Direct Current) architectures the mainstream trend. This new architecture imposes three core requirements on power devices: low on-state losses, high switching frequencies, and high-temperature and high-voltage resistance.
Silicon-based MOSFETs suffer from shortcomings such as high reverse recovery losses, severe performance degradation at high temperatures, and limited switching frequencies. In contrast, SiC (silicon carbide), as a third-generation semiconductor material, offers a bandgap three times wider than silicon, a breakdown field strength ten times higher, and thermal conductivity three times greater. These fundamental physical properties make SiC perfectly suited to the power supply requirements of AI servers, positioning it as the key technology to overcome high-efficiency bottlenecks.
II. Core Advantages of ROHM’s SiC MOSFETs: Suitable for All AI Server Scenarios
ROHM has been deeply engaged in SiC technology for many years. Its EcoSiC™ series of SiC MOSFETs (4th and 5th generations), with features such as ultra-low loss, high reliability, and design flexibility, have become the preferred choice for AI server power supplies, offering distinct core advantages:
1. Ultra-Low Losses, Ultimate Energy Efficiency
The fourth-generation SiC MOSFET employs a dual-trench structure, reducing on-resistance (RDS(on)) by 40% and switching losses by 50% compared to the previous generation. This significantly reduces power conversion losses, enabling AI server power supplies to achieve peak efficiencies of 97.5%+.
The fifth-generation products further optimize the structure, reducing on-resistance by an additional 30% at 175°C, completely resolving the “thermal runaway” issue common in silicon-based devices at high temperatures and making them suitable for high-load continuous operation scenarios.
With near-zero reverse recovery charge (Qrr), reverse recovery losses in totem-pole PFC topologies are eliminated. Support for high-frequency switching at 150 kHz–300 kHz reduces the size of passive components such as transformers and inductors, thereby increasing power supply power density.
2. High-Voltage and High-Temperature Resistance, Stable and Reliable
Mainstream voltage ratings cover 650V, 750V, and 1200V, perfectly matching the ±400V power supply requirements of AI servers and the next-generation 800VDC architecture.
With a maximum junction temperature of 175°C, excellent thermal conductivity, and low thermal management demands, it is suitable for high-temperature, high-power scenarios such as BBUs (Battery Backup Units) and high-power PSUs.
Robust short-circuit tolerance, optimized gate oxide reliability, and support for a **-5V turn-off drive voltage** ensure strong immunity to interference, guaranteeing long-term stable operation of AI server power supplies.
3. Flexible Design and Strong Compatibility
Supports a 15V gate-to-source voltage (compared to 18V in the previous generation), is compatible with IGBT driver circuits, lowers design barriers, and shortens R&D cycles.
Wide range of packages: TO-247-4L, TO-263-7L, etc., including packages with a source pin for the driver, fully unleashing high-speed switching performance; bare die options are available for customization to meet modular integration needs.
Easy to parallel, simple to drive, RoHS compliant, and with a long-term supply cycle of up to 8 years, ensuring stability in the AI server supply chain.
III. Mingjiada Electronics Supplies ROHM SiC MOSFETs, Precisely Matching AI Server Power Supply Requirements
Mingjiada Electronics specializes in the distribution of electronic components, focusing on the supply of power devices from international brands such as ROHM. With ample stock, a comprehensive range of models, and stable supply, we can quickly respond to bulk purchase orders from AI server power supply manufacturers.
Key Supply Models (Dedicated to AI Server Power Supplies)
Model Voltage Rating On-Resistance (Typ.) Package Key Application Scenarios
SCT4013DLL 750V 13mΩ TO-247-4L AI server BBU (Battery Backup Unit), ±400V power supply architecture
SCT4026DR 750V 26mΩ TO-247-4L High-power PSUs, PFC (Power Factor Correction) circuits
SCT4045DRHR 750V 45mΩ TO-247-4L Automotive-grade / Industrial-grade High-Voltage Power Supplies, UPS Energy Storage
SCT4018KR 1200V 18mΩ TO-263-7L 800VDC Architecture, High-Voltage Bus Conversion
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Mingjiada Electronics Core Service Advantages
Authenticity Guarantee: As an authorized Tier 1 distributor of ROHM, all products are genuine and come with complete datasheets, factory test reports, and traceability certificates, ensuring no counterfeit or refurbished components.
In-Stock and Fast Shipping: Our Shenzhen and Hong Kong warehouses maintain a full range of Rohm SiC MOSFETs in stock. We support both small-batch trial orders and large-volume purchases, with same-day ordering and next-day shipping to shorten delivery cycles.
Long-Term Partnership: We offer flexible pricing, credit terms, and inventory reservation services to meet the mass production needs of AI server manufacturers and build a stable supply chain.
IV. Typical Application Scenarios for ROHM SiC MOSFETs in AI Server Power Supplies
1. BBU (Battery Backup Unit)
In the ±400V power supply architecture of AI servers, the BBU provides instantaneous power compensation during power outages or momentary interruptions to protect data security. The **SCT4013DLL (750V/13mΩ)** from Rohm is ideal for this application, offering stable operation at high temperatures up to 175°C and achieving high-efficiency energy conversion with low losses. It has been adopted in volume by leading manufacturers.
2. High-Power PSUs (Power Supply Units)
With individual AI servers reaching power levels of several kilowatts, PSUs must balance high efficiency with high power density. ROHM’s fourth-generation SiC MOSFETs (such as the SCT4026DR) are used in PFC+LLC topologies. High-frequency switching reduces the size of magnetic components, achieving efficiency exceeding 97% and enabling ultra-slim 1U PSU designs.
3. 800 VDC High-Voltage Architecture
Next-generation AI servers will fully transition to 800 VDC power supply to reduce transmission losses. ROHM’s 1200 V SiC MOSFETs (such as the SCT4018KR) are suitable for high-voltage bus conversion and AC/DC rectification. With high voltage withstand capability and low loss, they support the stable implementation of high-voltage architectures.
Inquire Now
If you are looking for high-performance samples of ROHM’s SiC MOSFETs or seeking a bulk quote, please contact the Mingjiada Electronics sales team.
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