company blog about Mingjiada Electronics Supply Infineon IRF6894MTRPBF: 25V N-Channel HEXFET MOSFET, 1.3mΩ Ultra-Low On-Resistance

Shenzhen Mingjiada Electronics Co., Ltd. provides long-term, stable supply of the IRF6894MTRPBF high-performance N-channel HEXFET power MOSFET.

IRF6894MTRPBF Product Overview
The IRF6894MTRPBF is a high-performance N-channel MOSFET introduced by Infineon Technologies. This power device, model IRF6894MTRPBF, utilizes advanced HEXFET technology to deliver outstanding electrical performance.

As a key product in Mingjiada Electronics' portfolio, the IRF6894MTRPBF has gained widespread market recognition for its ultra-low on-resistance of 1.3mΩ. With a drain-source voltage rating of 25V, it is an ideal choice for medium-to-low voltage applications. The IRF6894MTRPBF utilizes the DirectFET MX package. This unique package design not only enhances thermal performance but also reduces PCB footprint.

Key technical characteristics of the IRF6894MTRPBF include:
• Drain-Source Voltage (Vdss): 25V
• Continuous drain current (Id): 32A (Ta), 160A (Tc)
• On-resistance (Rds(on)): 1.3mΩ @ 33A, 10V
• Gate drive voltage: 4.5V to 10V
• Operating temperature range: -40°C to 150°C (TJ)
• Package Type: DirectFET™ MX Surface Mount

Detailed Technical Specifications
Manufacturer: Infineon Technologies
Part Number: IRF6894MTRPBF
Device Type: N-channel Power MOSFET
Technology Platform: HEXFET®, DirectFET™
Breakdown Voltage (V_DSS): 25V (Minimum)
On-Resistance (R_DS(on)): 1.3mΩ @ V_GS=10V, I_D=20A (typical)
Continuous Drain Current (I_D): 200A @ T_C=100°C, 320A @ T_C=25°C
Pulse Drain Current (I_DM): 750A @ T_pulse=10μs, V_GS=10V
Gate Threshold Voltage (V_GS(th)): 1.6V ~ 2.5V (Typical 2.0V)
Gate Drive Voltage (V_GS): Recommended +10V, Maximum ±20V
Total Gate Charge (Q_g): 26nC @ V_GS=0V~10V
Gate-Source Charge (Q_gs): 12nC
Gate-Drain Charge (Q_gd): 6nC
Input Capacitance (C_iss): 6800pF @ V_DS=12.5V
Output Capacitance (C_oss): 1800pF @ V_DS=12.5V
Reverse Transfer Capacitance (C_rss): 360pF
Reverse Recovery Charge (Q_rr): 120nC (typical)
Avalanche Energy (E_AS): 600mJ (single pulse)
Avalanche current (I_AR): 200A
Operating temperature: -55°C to +175°C (junction temperature)
Package type: DirectFET™ Medium Can
Package dimensions: 7.0mm × 6.0mm × 0.7mm
Number of pins: 7+1 (7 functional pins + 1 thermal pad)
Thermal Resistance (R_thJC): 0.5°C/W (Bottom) + 1.2°C/W (Top)
AEC-Q101: Passed Grade 0
ESD Rating: HBM Class 1C (1000V~2000V)
RoHS Status: RoHS3 Compliant, Pb-Free
Halogen-Free: Yes

IRF6894MTRPBF Product Features:
Utilizes IR's next-generation silicon technology
Delivers optimal efficiency for 12V input synchronous buck applications

IRF6894MTRPBF Applications:
Next-generation servers, desktop computers, and notebook PCs

Purchasing Information
Part Number: IRF6894MTRPBF
Manufacturer: Infineon Technologies
Device Type: N-channel HEXFET MOSFET
Technology Platform: DirectFET™ Medium Can
AEC-Q101: Passed Grade 0
RoHS Status: RoHS3 compliant, Pb-Free
Minimum Order Quantity: Flexible support, samples available
Availability: Stock available, same-day shipping
Price Range: Tiered pricing based on purchase volume

For inquiries or purchasing needs regarding IRF6894MTRPBF, please contact us anytime:
Phone: +86 13410018555
Email: sales@hkmjd.com
Homepage: https://www.integrated-ic.com/