Mingjiada Electronics supplies the IPB65R110CFDA, a 650V automotive-grade N-channel power MOSFET from Infineon, part of the CoolMOS™ CFDA series. Below are its detailed specifications:
Product Description Of IPB65R110CFDA
The IPB65R110CFDA is a 650V/31.2A N-channel power MOSFET developed by Infineon, packaged in a PG-TO263-3 (D2PAK-3) package, and part of the CoolMOS™ CFDA series. It is specifically designed for automotive electronics, industrial power supplies, and high-frequency switching applications. The IPB65R110CFDA employs Super Junction (SJ) technology, offering low on-resistance, fast switching, and high-temperature stability, making it suitable for high-reliability applications such as electric vehicle (EV) on-board chargers (OBC), DC-DC converters, and photovoltaic inverters.
Key Features Of IPB65R110CFDA
High-voltage, high-current capability: 650V drain-source breakdown voltage (Vds) and 31.2A continuous drain current (Id), making IPB65R110CFDA suitable for high-power switching power supply designs.
Ultra-low on-resistance (Rds(on)): 110mΩ (typical) @ 10V Vgs, the IPB65R110CFDA reduces conduction losses and improves system efficiency.
High-speed switching performance: 11ns rise time, 6ns fall time, reducing switching losses, the IPB65R110CFDA supports high-frequency switching applications.
Integrated fast body diode: Low reverse recovery charge (Qrr) reduces switching noise, improving EMI performance.
Wide temperature range operation: -40°C to +150°C operating temperature range, compliant with AEC-Q101 automotive certification.
Optimised gate drive: Low gate charge (Qg = 118nC), IPB65R110CFDA reduces drive losses and increases switching frequency.
Detailed Specifications Of IPB65R110CFDA
Model: IPB65R110CFDA
Brand: Infineon
Package: PG-TO263-3 (D2PAK-3)
Technology: CoolMOS™ CFDA (Super-Junction MOSFET)
Drain-Source Voltage (Vds): 650 V
Continuous Drain Current (Id): 31.2 A
On-Resistance (Rds(on)): 110 (typical) mΩ
Gate Charge (Qg): 118 nC
Gate-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 3.5 V
Switching Time (tr/tf): 11/6 ns
Operating Temperature Range: -40 to +150 °C
Power Dissipation (Pd): 277.8 W
Main Applications Of IPB65R110CFDA
Electric Vehicle (EV) Drive Systems
IPB65R110CFDA can be used in 800V high-voltage platform inverters to enhance energy efficiency and reduce thermal management requirements.
Industrial Power Supplies & Photovoltaic Inverters
Suitable for high-frequency switching power supplies and solar inverters to reduce energy loss.
Server & Data Centre Power Supplies
The high efficiency of IPB65R110CFDA optimises 48V DC-DC converters, increasing power density.
HID Lighting & Battery Chargers
Utilises fast switching characteristics to improve the efficiency of LED drivers and fast-charging devices.
Motor Drives & Industrial Automation
IPB65R110CFDA is suitable for servo drives and variable frequency drives, improving system reliability.
Summary
As a 650V/31.2A power MOSFET in Infineon's CoolMOS™ CFDA series, offers low conduction losses, high-speed switching, and high-temperature stability, making it an ideal choice for applications such as electric vehicles, photovoltaic inverters, and industrial power supplies. The IPB65R110CFDA's PG-TO263-3 package facilitates PCB design, while AEC-Q101 certification ensures reliability in automotive electronics.
Mingjiada Electronics offers IPB65R110CFDA in stock, with genuine factory-direct products and fast delivery support.
For Purchasing Inquiries, Please Contact:
Phone: +86 13410018555 (Mr. Chen)
Email: sales@hkmjd.com
Website: www.integrated-ic.com
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