company blog about Mingjiada Electronics Supply Onsemi UJ4C075023 750V Silicon Carbide EliteSiC Cascode JFETs

Mingjiada Electronics Supply Onsemi UJ4C075023 750V Silicon Carbide EliteSiC Cascode JFETs

Shenzhen Mingjiada Electronics Co., Ltd. — Long-term supplier of Onsemi UJ4C075023 750V silicon carbide (SiC) EliteSiC Cascode JFETs, designed for high-voltage, high-efficiency power conversion applications such as photovoltaic inverters, energy storage systems, electric vehicle charging, server power supplies, UPS systems and industrial power supplies. We provide genuine products, quotation enquiries and supply support. Specific stock levels, prices, batch numbers and lead times are subject to Mingjiada’s confirmed quotation.

I. Product Positioning
The ON Semiconductor UJ4C075023 belongs to the EliteSiC Cascode JFET series. It utilises a common-source, common-gate (cascode) structure comprising a silicon carbide (SiC) JFET and a low-voltage silicon MOSFET, combining the high voltage rating and low loss advantages of SiC devices with gate drive characteristics similar to those of silicon MOSFETs. This device has a typical breakdown voltage of 750 V and an on-resistance in the 23 mΩ range, making it suitable for high-voltage power supply designs with stringent requirements for efficiency, power density and reliability.
Compared to traditional SiC MOSFETs, the key feature of the Cascode JFET is its normally-off operating mode, whilst its gate drive characteristics are closer to those of silicon MOSFETs, helping to lower the barriers to drive circuit design.

II. Key Features of the UJ4C075023
750 V voltage rating, suitable for high-voltage power conversion topologies
Low on-resistance in the 23 mΩ range, helping to reduce conduction losses
EliteSiC Cascode JFET structure, normally-off operating mode
Gate drive characteristics similar to those of silicon MOSFETs, facilitating system design integration
Suitable for high-frequency hard-switching and soft-switching topologies
Helps improve power supply efficiency and power density
Designed for high-temperature, high-reliability industrial and automotive-grade peripheral power supply applications

III. Typical Applications of the UJ4C075023
Electric vehicle charging
Photovoltaic inverters
Switch-mode power supplies
Power factor correction modules
Motor drivers
Induction heating

IV. Why Focus on Cascode JFETs
In high-voltage power supply design, SiC devices offer lower switching losses and the potential for higher switching frequencies. The UJ4C075023 utilises a Cascode JFET structure, with its normally-off characteristics facilitating safe system design; its gate drive method is similar to that of silicon MOSFETs, reducing the cost of adapting drive solutions. For designs transitioning from silicon-based power devices to SiC, the UJ4C075023 serves as one of the high-efficiency switching device options in the 750V class.

In power conversion systems such as photovoltaic inverters, on-board charging, server power supplies, industrial PFC and high-frequency DC-DC converters, silicon carbide power devices are central to the upgrade of high-voltage, high-frequency power supplies. Thanks to its comprehensive advantages—including standard drive compatibility, low on-state losses, excellent reverse recovery and a range of package options—the ON Semiconductor UJ4C075023 stands out as a cost-effective choice for the 750V power platform.

If you are developing projects in the fields of photovoltaics, energy storage, on-board charging or industrial high-power power supplies, and require a quotation, lead times or a datasheet for the UJ4C075023, or wish to enquire about the availability of other SiC power devices, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) for further supply details.
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