company blog about Mingjiada Electronics Supply Samsung KHA884901X-MC12 HBM2 Aquabolt Series DRAM Memory

Mingjiada Electronics Supply Samsung KHA884901X-MC12 HBM2 Aquabolt Series DRAM Memory

Shenzhen Mingjiada Electronics Co., Ltd. — Long-term supplier of Samsung HBM2 Aquabolt series core model KHA884901X-MC12. As an upgraded version of the Flarebolt series, it achieves significant energy efficiency improvements while maintaining high performance, delivering a high-bandwidth memory solution tailored for high-end computing scenarios.

KHA884901X-MC12: Samsung HBM2 Aquabolt series memory, a high-bandwidth 3D stacked memory for high-performance computing (HPC), AI inference, and high-end graphics rendering, utilizing MPGA packaging.

KHA884901X-MC12 employs Samsung's advanced TSV (Through-Silicon Via) 3D stacking technology, utilizing micro-bump interconnections between layers. It integrates multiple DRAM dies within a compact MPGA (Micro-Package Grid Array) package, drastically shortening data transmission paths to deliver both high bandwidth and low latency. It seamlessly integrates with 2.5D CoWoS (Chip-on-Wafer-on-Substrate) processes, enabling tight coupling with GPUs and accelerator chips to save PCB space and reduce link losses. This makes it ideal for core applications including supercomputing clusters, AI training/inference servers, high-end professional graphics workstations, and high-throughput network processors (NPUs).

KHA884901X-MC12 Core Specifications:
Series: HBM2 Aquabolt Series
Capacity: 8 GB
Speed: Up to 6.4 Gbps
Bit Width / Interface: 1024-bit bus
Single Pin Rate: 2.0 Gbps, corresponding to 256 GB/s per die (2.0 Gbps × 1024 bits ÷ 8); Voltage: 1.2V (more power-efficient than Flarebolt's 1.35V)
Refresh Cycle: 32 ms
Process & Stacking: Utilizes TSV (Through-Silicon Via) 3D stacking technology with micro-bump interconnects between layers. Integrates multiple DRAM dies onto a minimal substrate, significantly shortening data paths

KHA884901X-MC12 offers 8GB capacity per die, meeting high-end equipment demands for large-scale data caching and transmission. Its 1024-bit ultra-wide parallel bus paired with 2.0Gbps per-pin speed delivers 256GB/s bandwidth per die, efficiently handling massive parallel data transfers to alleviate memory bandwidth bottlenecks in high-performance computing systems. The operating voltage is optimized to 1.2V, significantly reducing power consumption and thermal pressure compared to the 1.35V of the previous Flarebolt series while maintaining equivalent performance output. This makes it more suitable for high-density cabinet deployments and prolonged high-load operations. With a refresh cycle of 32ms, it ensures stable and reliable data storage, adapting to the demanding operational environments of industrial and server-grade applications.

KHA884901X-MC12 Product Features:
4n prefetch architecture, 256-bit memory read/write access per cycle
BL=4
128-bit DQ width + ECC pin support per channel
Pseudo-channel mode operation
Product supports pseudo-channel mode only
Differential clock input (CK_t/CK_c)
Core chip supports 2 channels in 4H/8H mode
16 banks supported per channel in 4H/8H mode
Bank grouping support
2K or 4K bytes per page
DBIac configurable via MRS
Data masking with byte-level write masking capability
Self-refresh mode
I/O voltage: 1.2V
DRAM core voltage: 1.2V (independent of I/O voltage)
4H channel density: 4Gb, 8H channel density: 8Gb
Unterminated data/address/command/clock interfaces
Temperature sensor with 3-bit encoded range output

KHA884901X-MC12 Application Scenarios:
Supercomputing and HPC clusters
AI training/inference servers (e.g., early NVIDIA and AMD data center GPU platforms)
High-end workstations, professional graphics rendering equipment
High-bandwidth network processing units (NPUs)

【Mingjiada Electronics】Long-term supply of KHA884901X-MC12: Samsung HBM2 Aquabolt series memory. For more product information or to request samples of KHA884901X-MC12, please visit Mingjiada Electronics' official website (https://www.integrated-ic.com/) for supply details.