company blog about Mingjiada Electronics Supply ST L6387ED013TR High Voltage Half-Bridge Gate Driver IC

Mingjiada Electronics Supply ST L6387ED013TR High Voltage Half-Bridge Gate Driver IC

L6387ED013TR is a high-voltage half-bridge gate driver (Gate Driver IC) from STMicroelectronics’ (ST) L6387E series, housed in an SO-8 package. Mingjiada Electronics maintains a long-term stock of this product, which is suitable for various power conversion and motor drive applications.

I. Product Description
The L6387ED013TR is a monolithic high-voltage high-side/low-side gate driver manufactured using the BCD™ ‘offline’ process, capable of driving half-bridge circuits comprising N-channel power MOSFETs or IGBTs. Its high-side floating channel can withstand a bootstrap voltage of up to 600V, whilst the two output channels provide drive capabilities of 400mA (sink current) and 650mA (source current) respectively. It also features a built-in interlock function to prevent short-circuiting between the upper and lower transistors. The L6387ED013TR integrates a bootstrap diode and VCC under-voltage lock-out (UVLO) protection. Its logic inputs are compatible with CMOS/TTL levels, and the outputs switch in phase with the inputs, making it the preferred solution for implementing compact and reliable power stage drivers.

II. Specifications (L6387ED013TR)
Drive Configuration: Half-bridge (High-Side & Low-Side), independent dual channels
Drive Load Type: N-channel MOSFET / IGBT
Supply Voltage VCC: Up to 17V (typical 15V)
High-Side Floating Voltage (Bootstrap): Up to 600V
Peak Output Current: Source current 400mA / Drain current 650mA
Input Logic Compatibility: CMOS / TTL (VIH ≈ 3.6V, VIL ≈ 1.5V)
Rise/Fall Time (1nF load): tr ≈ 50ns / tf ≈ 30ns
Propagation Delay: Typical 110ns (tpHL) / 105ns (tpLH)
dV/dt immunity: ±50 V/ns (full temperature range)
Protection functions: VCC under-voltage lock-out (UVLO), built-in interlock
Built-in bootstrap diode: Yes
Operating temperature range: -40°C to +125°C (junction temperature)
Package type: SO-8 (8-SOIC, 3.90 mm wide)

III. L6387ED013TR Key Features:
600 V high-voltage rail: The high-side floating section can withstand voltages up to 600 V
Excellent dV/dt immunity: Up to ±50 V/nsec across the full temperature range
Robust drive capability: 400 mA sink current / 650 mA source current
Fast switching times: Rise/fall times of 50/30 nsec (1 nF load)
CMOS/TTL Schmitt trigger inputs: With hysteresis and pull-down functionality
Integrated bootstrap diode: No external diode required
Output is in phase with the input
Interlock function: Prevents both outputs from being set to high simultaneously
Undervoltage protection (UVP)

IV. Application Areas
The L6387ED013TR is widely used in the following scenarios:
Motor control – variable-speed drives, industrial automation motor control
Inverters – power inverter systems
Switched-mode power supplies (SMPS) – SMPS applications
Industrial automation – industrial control systems
Power management systems – efficient power management
Automotive electronics – designed specifically for automotive applications, suitable for harsh environments

Mingjiada Electronics maintains a long-term stock of the full range of ST gate driver ICs and power devices. The L6387ED013TR SO-8 is available as genuine stock, with support for samples and both small- and large-volume procurement, as well as a complementary BOM order fulfilment service.

For further information on the ST L6387ED013TR high-voltage half-bridge gate driver or to enquire about sample prices, please visit Mingjiada Electronics (https://www.integrated-ic.com/) for more supply details.