Mingjiada In Stock | NXP PSMN4R0-60YS: 60V/100A Automotive-Grade N-Channel Power MOSFET
Shenzhen Mingjiada Electronics has genuine, brand-new PSMN4R0-60YS units in stock. This is a high-performance N-channel power MOSFET developed by NXP (now Nexperia). With its extremely low on-resistance and outstanding thermal performance, this device has become an ideal choice for applications such as DC-DC conversion, motor drives, and battery protection.
Product Overview
The PSMN4R0-60YS is an automotive-grade N-channel enhancement-mode power MOSFET from NXP, housed in an LFPAK56 (SOT669) package. which is compatible with the Power SO-8 package size. It features a 60V breakdown voltage, 100A continuous drain current, and an ultra-low on-resistance of 4mΩ. Certified for operation at 175°C, it meets automotive-grade reliability standards and is suitable for high-power applications in industrial, communications, and consumer electronics sectors.
Product Status: 100% genuine, in stock.
The following are the detailed technical specifications of this device for engineers’ reference during selection:
Drain-Source Voltage (VDS): 60V
Continuous Drain Current (ID): 100A (Tj=175°C) / 74A (Tc=25°C)
On-Resistance (RDS(on)): Typical 3.6 mΩ / Maximum 4.0 mΩ @ VGS=10V
Gate charge Qg: Typical 47.5 nC / Max. 56 nC
Input capacitance Ciss: 3501 pF
Power dissipation PD: 130 W
Gate-Source Voltage VGS: ±20 V
Operating Temperature Tj: -55 to +175 °C
Package: LFPAK56 (SOT669)
Avalanche Energy Eas: 170
PSMN4R0-60YS Key Features and Benefits
1. Extremely Low On-Resistance (RDSon)
The PSMN4R0-60YS has a maximum on-resistance of only 4.0 mΩ (typical 3.6 mΩ). Such low resistance results in extremely low conduction losses (I²R) when handling high currents (e.g., 50A–100A). This not only improves power conversion efficiency but also reduces heat generation, thereby lowering the requirements for thermal management systems.
2. High Avalanche Energy Rating (Eas = 170 mJ)
In motor control or hot-swap applications, inductive loads in the circuit can generate significant voltage spikes. With an avalanche energy rating of 170 mJ, this device can withstand severe unclamped inductor switching (UIS) stress, enhancing system robustness and reliability.
3. Maximum Operating Junction Temperature of 175°C
Unlike standard commercial-grade devices (typically rated at 150°C), the PSMN4R0-60YS supports a wide operating temperature range from -55°C to +175°C. This makes it ideally suited for high-temperature environments such as automotive engine compartments.
4. Advantages of the LFPAK Package
The LFPAK package (Power-SO8) is a proprietary technology from NXP/Nexperia. Compared to standard SO-8 packages, it offers:
Higher mechanical strength: The lead frame is thicker and less prone to bending.
Improved thermal path: Lower thermal resistance thanks to the source heat sink pad.
Ease of soldering: The large, exposed drain pad facilitates PCB thermal design.
PSMN4R0-60YS Typical Application Areas
With its 60V voltage rating and 100A current handling capability, the PSMN4R0-60YS is suitable for the following demanding applications:
Automotive DC-DC converters: Voltage conversion in 12V/24V battery systems.
Motor Control: Control of windshield wipers, power windows, electric seats, and electric fans in electric vehicles.
Load Switching and Battery Protection: Discharge/charge switches in lithium-ion battery management systems (BMS).
Communication Power Supplies and Servers: Point-of-Load (POL) power modules and synchronous rectification circuits.
As a professional electronic component supplier, Mingjiada Electronics maintains a large stock of PSMN4R0-60YS. We guarantee that all products are genuine OEM items and support sample requests and small-volume purchases.
Order Now
Model: PSMN4R0-60YS
Package: LFPAK56
Minimum Order Quantity: 1 pc (tape-and-reel and loose packaging available)
Lead Time: In stock, ready to ship
Contact: Please contact Mingjiada’s Sales Department for the latest quote.
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