Shenzhen Mingjiada Electronics Co., Ltd. is a professional stock supplier of Infineon GaN HEMT transistors, offering brand-new, genuine Infineon CoolGaN™ series GaN HEMT transistors in stock. Our product range covers the full voltage range from 40V to 850V, including the G3 medium-voltage series, G5 high-voltage series, bidirectional switches (BDS), and automotive-grade devices, providing one-stop GaN power device procurement support for customers in fast charging, data centers, photovoltaic inverters, new energy vehicles, and industrial power supplies.
I. Core Infineon GaN HEMT Product Series Supplied by Mingjiada
Infineon’s CoolGaN™ is one of the few GaN HEMT product portfolios in the industry that covers both medium/low-voltage and high-voltage applications while offering automotive-grade options. Mingjiada maintains stock of the following series and supports both small-batch sample requests and mass production deliveries.
1. CoolGaN™ G5 High-Voltage Series (650V/700V)
Based on Gate Injection Transistor (GIT) technology, the G5 series is designed for high-voltage applications in industrial and new energy sectors. It offers a 3%–5% efficiency improvement over traditional silicon-based solutions and supports high-frequency switching at the MHz level. According to official data from Infineon, the 650V G5 products feature on-resistances ranging from 25 mΩ to 140 mΩ and a maximum continuous drain current of up to 70 A. Package options include TOLL, TOLT, DSO TSC, DFN 8×8, and ThinPAK 5×6.
Mingjiada maintains the following representative G5 models in stock:
Model Package Key Parameters
IGT65R025D2 TOLL 650V / 70A / 25mΩ
IGT65R035D2 TOLL 650V / 49A / 35mΩ
IGT65R045D2 TOLL 650V / 38A / 45mΩ
IGT65R140D2 TOLL 650V / 13A / 140mΩ
IGLD65R055D2 DFN 8×8 650V / 28A / 55mΩ
2. CoolGaN™ 600V Industrial-Grade Series (e-mode HEMT)
The 600V e-mode GaN HEMT is Mingjiada’s high-volume product line for data center power supplies, server SMPS, telecom rectifiers, and wireless charging applications. This series features an enhanced (normally off) structure with no reverse recovery charge, a rise time as low as 9 ns, a fall time of 13 ns, and an operating junction temperature range from -55°C to +150°C.
Mingjiada’s representative models in the 600V series include:
IGO60R070D1: 600V / 31A / 70mΩ, DSO-20 package, suitable for hard-switching and soft-switching half-bridge topologies such as totem-pole PFC and high-frequency LLC.
IGOT60R070D1: Top-cooled DSO-20 package, suitable for high-power-density thermal management designs.
IGLD60R070D1: LSON-8 package, designed for compact adapters and fast charging.
IGT60R190D1: HSOF-8 package, 190 mΩ rating, suitable for medium-power industrial power supplies.
IGLR60R340D1: 340 mΩ rating, suitable for cost-sensitive auxiliary power supplies and low-power applications.
IGLR60R260D1: 600V e-mode GaN HEMT, designed for high-frequency, high-efficiency conversion.
IGI60F1414A1L: 600V CoolGaN™ smart power stage with integrated gate driver, 140 mΩ, QFN-28 8×8 mm package, simplifying system design and protection circuits.
3. CoolGaN™ G3 Mid-Voltage Series (40V–120V)
The G3 series is designed for mid- to low-voltage applications such as 48V automotive systems, USB-C fast charging, motor drives, and telecom power supplies. It features an RQFN 5×6 / 3.3×3.3 package compatible with silicon-based MOSFET layouts, with on-resistance as low as 1.1 mΩ to 2.3 mΩ. The 40V bidirectional switch (BDS) models can replace traditional back-to-back MOSFETs, saving 50%–75% in PCB area.
Representative model: IGO60R070D1 (also listed for low-to-medium-voltage bidirectional switch applications); for a complete selection table of specific 40V/100V G3 models, please contact the Mingjiada sales team.
4. CoolGaN™ Bidirectional Switch (BDS) — Single-Chip Bidirectional Conduction/Blocking
Infineon’s CoolGaN™ BDS is the industry’s first single-chip, integrated enhancement-mode bidirectional GaN device. It replaces the traditional “four-device parallel” bidirectional switch architecture with a single device, significantly reducing the bill of materials and PCB footprint.
Representative models supplied by Mingjiada:
IGLT65R055B2: 650V high-voltage industrial-grade BDS in a TOLT (Top-Out-Through) package, featuring 850V surge immunity; suitable for bidirectional charging stations, energy storage PCS, solid-state circuit breakers, and bidirectional DC-DC converters.
IGK080B041S: 40V low-voltage general-purpose BDS in a chip-scale package, designed for miniaturized bidirectional switching applications in automotive and consumer electronics.
5. CoolGaN™ Automotive-Grade Series (100V/600V, AEC-Q101)
Infineon has introduced AEC-Q101-certified GaN HEMTs for automotive 48V systems and on-board charging. Mingjiada offers the 100V automotive-grade series, suitable for zone controllers, main DC-DC converters, high-performance auxiliary systems, and Class D audio amplifiers; it also supplies 600V e-mode GaN HEMTs that meet automotive standards (such as IGOT60R070D1AU, IGO60R070D1AU, etc.).
II. Why Choose Mingjiada for Procuring Infineon GaN HEMTs
Direct from the manufacturer, brand-new and genuine. All Infineon CoolGaN™ products at Mingjiada come directly from the manufacturer or authorized channels, ensuring no refurbished or loose new parts. Each chip undergoes quality inspection to guarantee the long-term reliability of power devices.
Full product line in stock, with fast delivery. Coordinated operations across dual warehouses in Shenzhen and Hong Kong maintain strategic safety stock for popular CoolGaN™ models. Domestic shipments are dispatched within 48 hours, supporting flexible switching between R&D samples and mass production orders, which significantly shortens customers’ time-to-market.
Price competitiveness driven by volume purchasing. Leveraging our deep partnership with Infineon and the advantages of bulk purchasing, Mingjiada offers tiered pricing and long-term price lock-in services to help customers control BOM costs during the GaN solution implementation phase.
III. Typical Application Scenarios
Infineon’s CoolGaN™ GaN HEMTs have already been adopted by Mingjiada’s customer base across the following core scenarios:
Fast Charging and Adapters: 600V e-mode and G3 medium-voltage devices are used in high-frequency QR flyback, totem-pole PFC, and USB-C PD power supplies, enabling compact, high-power-density designs.
Data Center and Server Power Supplies: The 650V G5 series is used in Titanium-rated server SMPS and high-voltage DC power distribution, with switching losses significantly lower than those of silicon-based super-junction MOSFETs.
PV Inverters and Energy Storage: G5 650V devices are used in the DC-AC stage of string inverters and energy storage PCS, boosting efficiency to over 98%.
New Energy Vehicles: 100V/600V automotive-grade GaN is used in OBCs, DC-DC converters, and 48V zone controllers, meeting AEC-Q101 reliability requirements.
Industrial Motor Drives and Solid-State Circuit Breakers: BDS bidirectional switches are used for motor forward/reverse control, solid-state relays, and bidirectional power conversion, simplifying the topology with a single-chip architecture.
IV. Contact Mingjiada for GaN HEMT Selection and Quotes
To check current stock availability for the above models, obtain a complete selection table, or request free samples, please contact Mingjiada Electronics:
Contact: Mr. Chen
Phone / WeChat: +86 0755-83294757 / 13410018555
Email: sales@hkmjd.com
Address: Rooms 1239–1241, New Asia Guoli Building, Zhenzhong Road, Futian District, Shenzhen, Guangdong Province
Mingjiada also supplies Infineon’s GaN-specific gate drivers (such as the GaN EiceDRIVER™ series) and SiC MOSFETs, supporting one-stop ordering for GaN+SiC hybrid solutions.
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