company blog about Mingjiada Supply Onsemi NVBG080N120SC1 1200V Silicon Carbide (SiC) MOSFET

Mingjiada Supply Onsemi NVBG080N120SC1 1200V Silicon Carbide (SiC) MOSFET

Shenzhen Mingjiada Electronics Co., Ltd. — Long-term supplier of ON Semiconductor (onsemi) NVBG080N120SC1: a 1200V, 80mΩ automotive-grade silicon carbide (SiC) MOSFET in a D2PAK-7L package. This device is specifically designed to meet the stringent requirements for high efficiency and high power density in electric vehicles (EV/HEV) and industrial high-frequency power supplies.

I. Product Overview and Core Positioning (NVBG080N120SC1)
The NVBG080N120SC1 belongs to ON Semiconductor’s EliteSiC M1 series and is an N-channel enhancement-mode power MOSFET. Compared to traditional silicon-based devices, the SiC material provides lower on-resistance and ultra-fast switching speeds, making it a key component for improving system efficiency.
Key specifications: 1200V breakdown voltage, 30A continuous drain current (at 25°C), and a typical on-resistance of just 80mΩ.
Package Features: The D2PAK-7L (TO-263-7L) package offers excellent thermal performance and low junction-to-case thermal resistance (RθJC), whilst the 7-pin design optimises switching noise and gate drive circuits.
Application Areas: Primarily targeted at high-frequency power conversion applications such as on-board chargers (OBC) for new energy vehicles, high-voltage DC-DC converters, motor drivers and photovoltaic inverters.

II. NVBG080N120SC1 Specifications:
FET Type: N-channel
Technology: SiC FET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C – Continuous Drain Current (Id): 30 A (Tc)
Drive Voltage (Maximum Rds On, Minimum Rds On): 20 V
On-Resistance (Maximum) at Various Id and Vgs: 110 mΩ @ 20 A, 20 V
Vgs(th) (Maximum) at Various Id: 4.3 V @ 5 mA
Gate charge (Qg) at various Vgs (Max): 56 nC @ 20 V
Vgs (Max): +25 V, -15 V
Input capacitance (Ciss) at various Vds (Max): 1154 pF @ 800 V
Power dissipation (Max): 179W (Tc)
Operating temperature: -55°C to 175°C (TJ)
Mounting type: Surface mount
Supplier device package: D2PAK-7
Package/housing: TO-263-8, D2PAK (7 leads + pad), TO-263CA

III. Key Features: Five Core Advantages of the NVBG080N120SC1
1. Ultra-low on-resistance (RDS(on) = 80 mΩ)
The NVBG080N120SC1 features a typical on-resistance as low as 80 mΩ, which directly reduces power loss in the on-state, enabling the device to operate at higher efficiency whilst minimising the burden on thermal management. Compared to traditional silicon-based MOSFETs or IGBTs, the wide bandgap properties of SiC material enable devices of the same voltage rating to achieve lower on-resistance per unit area, making them particularly suitable for high-efficiency power conversion applications on 1200V high-voltage platforms.
2. Ultra-low Gate Charge (QG(tot) = 56 nC)
The NVBG080N120SC1 has a gate charge of just 56 nC, which means the drive energy required during the switching process is significantly reduced. This not only lowers the design complexity and power consumption of the drive circuit but also enables extremely high switching speeds. Faster switching frequencies allow the system to reduce the size of passive components (such as transformers, inductors and capacitors), significantly improving power density and reducing the overall system BOM cost.
3. Low effective output capacitance (Coss = 79 pF)
The NVBG080N120SC1 features a typical output capacitance as low as 79 pF, which helps to reduce energy loss during the switching process and further improves switching efficiency. This low capacitance characteristic, combined with the high-frequency switching capability of SiC material, effectively reduces the capacitive loss component in switching losses, making it particularly suitable for topologies such as high-frequency DC-DC conversion and LLC resonant circuits.
4. High Reliability in Harsh Environments
The NVBG080N120SC1 has undergone 100% avalanche testing and offers excellent surge immunity and robustness, ensuring stable operation under harsh conditions. With a wide operating junction temperature range of -55°C to +175°C, it can operate stably over the long term in extreme temperature environments.
5. Outstanding System-Level Advantages
Based on the aforementioned electrical characteristics, the NVBG080N120SC1 delivers significant performance improvements at the system level:
Maximum efficiency: Comprehensive optimisation of low conduction and switching losses enables the system to achieve peak efficiencies exceeding 98%;
Higher power density: Higher switching frequencies allow for the use of smaller magnetic components and filter capacitors, significantly reducing system size;
Reduced EMI: Optimised switching characteristics and advanced packaging processes effectively suppress electromagnetic interference;
Reduced system size: Improvements in overall efficiency and power density result in a smaller overall system footprint and a simplified thermal design.

IV. Typical Application Scenarios for the NVBG080N120SC1
Electric Vehicle On-Board Chargers (OBC): Leveraging its high voltage rating and high efficiency, it is used in the PFC boost stage and DC-DC isolation stage to improve charging efficiency.
High-Voltage DC-DC Converters (EV/HEV): Acting as the main switching device, it converts high-voltage battery (400V/800V) voltage to low-voltage (12V/48V) system voltage.
Photovoltaic Inverters and Energy Storage Systems: Used in boost circuits within string inverters, utilising high switching frequencies to reduce inductor size.
Industrial Power Supplies and UPS: Suitable for high-power-density server power supplies and uninterruptible power supply (UPS) systems.

V. Mingjiada Electronics – One-Stop Supplier of NVBG080N120SC1
Mingjiada maintains a long-term stock of ON Semiconductor’s NVBG080N120SC1 1200V silicon carbide MOSFETs. We supply genuine products with ample stock, supporting both small-batch samples and large-volume orders. Relying on an efficient logistics system, we ensure rapid product delivery.
Mingjiada Electronics operates multiple warehouses in Shenzhen and Hong Kong, with a stock portfolio exceeding 2 million SKUs covering integrated circuits, discrete devices, passive components and more. We support sample orders, bulk orders and mixed-lot procurement, offering standardised packaging, bulk repackaging and rapid dispatch services to suit various procurement scenarios, including R&D testing, small-scale production and large-scale mass production.

To enquire about the latest prices, stock availability or to request samples of the NVBG080N120SC1, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) to obtain a bespoke quotation and datasheet.