Mingjiada Supply/ Recycle Infineon AIMZA75R020M1H 750V CoolSiC™ Automotive Silicon Carbide MOSFET
I. Product Overview:
The AIMZA75R020M1H is an automotive-grade silicon carbide (SiC) power MOSFET from Infineon’s CoolSiC™ series, built using second-generation SiC trench technology. Drawing on Infineon’s more than 20 years of expertise in silicon carbide technology, this device utilises the properties of wide-bandgap SiC material to deliver a unique combination of performance, reliability and ease of use. The AIMZA75R020M1H is suitable for operation in high-temperature and harsh environments, enabling industry-leading system efficiency in a simplified and cost-effective manner.
II. Detailed Product Specifications
Model: AIMZA75R020M1H
Brand: Infineon
Product Series: CoolSiC™ Automotive MOSFET Silicon Carbide Power Transistor
Drain-Source Voltage (VDSS): 750 V
Typical on-resistance RDS(on): 20 mΩ (maximum 27 mΩ)
Continuous drain current ID: 75 A (Tc = 25 °C)
Peak drain current IDM: 261 A
Gate charge QG (typ): 67 nC
Output charge Qoss (typ) @ 500 V: 133 nC
Package: PG-TO247-4
Operating temperature range: –55°C to +175°C
III. Product Features and Advantages
The AIMZA75R020M1H CoolSiC™ MOSFET offers a number of leading technical features:
1. Highly robust 750V technology: 100% of the devices undergo avalanche testing to ensure reliability under extreme operating conditions.
2. Industry-leading efficiency: Offers best-in-class RDS(on) × Qfr performance, as well as excellent RDS(on) × Qoss and RDS(on) × QG combinations.
3. Outstanding switching performance: A unique combination of low Crss/Ciss and high VGS(th) effectively reduces switching losses and enhances hard-switching efficiency.
4. Infineon’s proprietary chip mounting technology: Provides a drive source pin, enhances robustness against parasitic conduction, and supports unipolar gate drive.
5. Higher switching frequencies: Enables operation at higher frequencies in soft-switching topologies, contributing to system miniaturisation and increased power density.
IV. Key Application Areas
As an automotive-grade silicon carbide power device, the AIMZA75R020M1H is primarily targeted at the following automotive electronics applications:
On-board chargers (OBC): Supports 11 kW and 22 kW bidirectional on-board charger designs, improving charging efficiency and power density
Automotive high-voltage DC-DC converters (HV-LV)
Automotive static switches (eFuses, Battery Management Systems (BMS))
Electric vehicle charging infrastructure
Furthermore, this device can also be applied in solar photovoltaic inverters, uninterruptible power supplies (UPS), energy storage and battery formation systems, as well as telecommunications and server switching power supplies.
V. Mingjiada Electronics | Stock Availability + Inventory Buy-back
Component Supply:
We maintain a stock of genuine, original Infineon AIMZA75R020M1H silicon carbide (SiC) MOSFETs. We can provide datasheets and support enquiries for samples or bulk purchases, ensuring rapid delivery through our efficient logistics network.
Stock Buyback Service:
We offer long-term cash purchases of brand-new, original AIMZA75R020M1H components. Our buyback scope includes project offcuts, obsolete stock and distributor surplus stock. Our professional team provides rapid valuations and secure transactions, helping businesses free up capital and reduce warehousing costs.
In addition to the AIMZA75R020M1H, Mingjiada also deals in the full range of Infineon CoolSiC™ silicon carbide discrete devices, SiC power modules, automotive-grade MOSFETs and IGBTs, offering model searches, price comparisons and buy-back valuations.
For further information on Infineon CoolSiC™ power devices, to request samples or enquire about buy-back prices, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) for more details on supply and demand.
Contact Person: Mr. Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753