Mingjiada Supply/Recycle Starpower GD75PFX170C6SG 1700V/75A IGBT Power Modules
The GD75PFX170C6SG is a 1700V/75A IGBT power module manufactured by Starpower Semiconductor (STARPOWER).
Basic Information:
Model: GD75PFX170C6SG
Brand: Starpower (Starpower Semiconductor)
Device Type: PIM three-phase rectifier + inverter integrated IGBT power module
Rated Specifications: 1700V / 75A
Package Type: C6 package
Circuit Topology: Three-phase rectifier bridge + three-phase inverter bridge (PIM integrated solution)
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Product Overview
The GD75PFX170C6SG utilises trench IGBT chip technology and integrates soft-recovery freewheeling diodes; it is classified as a medium-to-high-voltage industrial-grade power module. The module utilises a DBC (Copper-Clad Laminate) substrate with an integrated insulated copper backplate and a low-inductance housing design, optimising a balance between conduction losses, switching losses and short-circuit withstand capability. It is suitable for industrial power conversion equipment with a 690V AC busbar level.
Key Features of the GD75PFX170C6SG
Trench IGBT, low saturation voltage drop VCE (sat), excellent conduction losses
10 μs short-circuit withstand capability, providing ample margin for system short-circuit protection design
VCE (sat) exhibits a positive temperature coefficient, facilitating current sharing in multi-device parallel configurations
Maximum allowable junction temperature Tjmax = 175 °C
Integrated fast soft-recovery anti-parallel freewheeling diode (FWD) to suppress voltage spikes
DBC insulated copper substrate, insulation withstand voltage 4000 V (50 Hz, 1 min)
Low-parasitic-inductance housing to reduce switching oscillations and EMI
GD75PFX170C6SG Maximum Electrical Specifications (TC = 25°C)
VCES (Collector-Emitter Withstand Voltage): 1700 V
VGES (Gate-Emitter Voltage): ±20 V
IC (Continuous Collector Current): 75 A
Operating Junction Temperature Range: -40°C to +150°C
Storage Temperature: -40°C to +125°C
GD75PFX170C6SG Key Features
Low on-state voltage drop: Utilises Trench-FS (Trench-Field-Stop) IGBT technology.
Short-circuit withstand capability: Capable of withstanding short circuits for 10 μs.
Positive temperature coefficient: VCE(sat) has a positive temperature coefficient, facilitating parallel operation.
High operating temperature: Maximum junction temperature of up to 175°C.
Low-inductance package: Features a low-inductance package design.
Fast-recovery diode: Integrates a fast, soft-recovery anti-parallel freewheeling diode (FWD).
High isolation: Utilises an insulated copper substrate with DBC (Direct Bonded Copper) technology, offering excellent thermal and insulation performance. Isolation voltage up to 4000 V.
The GD75PFX170C6SG is primarily used in the following fields:
Motor-driven frequency converters
AC and DC servo drive amplifiers
Uninterruptible power supplies (UPS)
The GD75PFX170C6SG is an IGBT power module launched by Jiaxing Starpower (STARPOWER), utilising a C6 package and low-loss Trench Field-Stop (Trench FS) chip technology. The module integrates a three-phase rectifier bridge, a braking unit and a three-phase inverter, making it a highly integrated PIM (Power Integrated Module).
Mingjiada Electronics has been supplying and recycling IGBT modules – GD75PFX170C6SG – for many years. If you would like to find out more about the GD75PFX170C6SG, purchase samples or enquire about recycling prices, please contact Mingjiada Electronics.
Company URL: https://www.integrated-ic.com/
Contact Person: Mr. Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753