Shenzhen Mingjiada Electronics Co., Ltd Original Spot Supply Renesas F1421NLGK8 RF Amplifier RF MIXER 0.35 UM SIGE BIC MOS
Description Of F1421NLGK8
The F1421NLGK8 is a high gain/high linearity RF amplifier for high performance RF applications.The F1421NLGK8 has a gain of 20.3dB, an OIP3 of +40dBm, and a noise figure of 5.5dB at 1.9GHz.The device operates from a single 5V supply and a 138mA ICC.
In a typical base station, the RF amplifier is used in the RX and TX communication paths to increase the signal level. the F1421NLGK8 amplifier is packaged in a QFN package and fabricated using a silicon chip, which makes it extremely reliable.
Typical Applications Of F1421NLGK8
- Multi-mode, multi-carrier transmitters
- PCS1900 base station
- DCS1800 base station
- WiMAX and LTE base stations
- UMTS/WCDMA 3G base stations
- PHS/PAS base stations
- Public Safety Infrastructure
Features Of F1421NLGK8
- Wideband 1.7GHz to 2.2GHz
- Typical gain of 20.3dB at 1.9GHz
- Noise figure of 5.5dB at 1.9GHz
- +40dBm OIP3 at 1.9GHz
- +23dBm output P1dB at 1.9GHz
- Single 5V supply voltage
- ICC = 138mA
- -40°C to +105°C Operating Temperature
- 50Ω single-ended input/output impedance
- Standby mode to save power
- 4mm x 4mm, 24-pin QFN package
Figure 1. F1421NLGK8 RF Amplifier Block Diagram
Figure 2. F1421NLGK8 QFN Package Pin Assignment - Top View
For product specifications of the F1421NLGK8 RF amplifier, please contact customer service at +86 13410018555 (Wechat synchronous) or email sales@hkmjd.com.
Company website: www.hkmjd.com
Your message must be between 20-3,000 characters!
