company blog about Mingjiada Supply Renesas Half-Bridge FET Drivers, Half-Bridge Gate Drivers, Supply High-Frequency GaN/MOSFET Half-Bridge Drivers

Mingjiada Supply Renesas Half-Bridge FET Drivers, Half-Bridge Gate Drivers, Supply High-Frequency GaN/MOSFET Half-Bridge Drivers

Shenzhen Mingjiada Electronics Co., Ltd. — Long-term supplier of [Renesas] half-bridge FET drivers for high-efficiency power supply designs, covering products such as half-bridge gate drivers and high-frequency GaN/MOSFET half-bridge drivers. Mingjiada Electronics stocks a comprehensive range of mainstream models and supports both small-batch samples and large-volume orders. Backed by an efficient logistics system, we ensure rapid product delivery.

Renesas Half-Bridge FET Drivers
Renesas’ half-bridge (H-bridge) drivers can handle voltages of up to 100V, offering industry-leading gate drive rise and fall times, as well as excellent input-to-output propagation delay performance. They support independent high-side/low-side control or PWM input, providing flexible drive options for power stage modules based on silicon and gallium nitride MOSFETs.

RRW40120 – 600V half-bridge gate driver for high-side and low-side switching applications
Details: The RRW40120 is a high-voltage, high-frequency gate driver specifically designed for high-side (HS) and low-side (LS) switching devices, and optimised for Renesas SuperGaN® FETs and conventional power MOSFETs.
Mingjiada Electronics recommended model: RRW40120-002

RRP68151 – High-frequency GaN/MOSFET half-bridge driver with 100V rating, 2A sink current, 5.3A source current and 5V supply
Details: The RRP68151 is a 5V-powered high-frequency half-bridge driver optimised for enhancement-mode gallium nitride field-effect transistors and low-threshold N-channel MOSFETs. It provides a sink current of 2A and a source current of 5.3A, supporting switching nodes with a maximum DC voltage of 100V.
Mingjiada Electronics recommended models: RRP68151-BH0, RRP68151-NH0

RRP68150 – 100 V, 2 A sink current, 5.3 A source current, 5 V-supplied high-frequency GaN/MOSFET half-bridge driver with anti-short-circuit protection
Details: The RRP68150 is a 5 V-supplied high-frequency half-bridge driver, optimised for enhancement-mode GaN ECTs and low-threshold N-channel MOSFETs. It provides 2A sink current and 5.3A source current capability, supporting switching nodes with a maximum DC voltage of 100V. The driver’s PWM input is compatible with 3.3V/5V CMOS logic and can withstand voltages up to 14V; this characteristic is independent of the VDD supply voltage.
Mingjiada Electronics recommended models: RRP68150-BH0, RRP68150-NH0

RRP68145 – 100 V, 3 A sink current, 4 A source current, high-frequency half-bridge driver with three-level PWM input and adjustable dead time
Details: The RRP68145 is a 100 V, 3 A sink current, 4 A source current, high-frequency MOSFET half-bridge driver. The RRP68145 features a three-level PWM input with a programmable dead-time. It operates over a wide supply voltage range of 6V to 18V and incorporates a high-side bootstrap diode, enabling it to drive both high-side and low-side NMOS transistors in 100V half-bridge applications.
Mingjiada Electronics recommended model: RRP68145-NH0

ISL78424 – 100V pin, 4A peak, half-bridge driver with single PWM input and adaptive dead-time control
The ISL78424 is an automotive-grade (AEC-Q100 Grade 1) high-voltage, high-frequency half-bridge NMOS field-effect transistor driver designed to drive the gates of half-bridge topologies up to 70V. This series of half-bridge drivers features a peak gate drive current of 3A source current and 4A drain current.
Mingjiada Electronics recommended models: ISL78424AVEZ, ISL78424AVEZ-T, ISL78424AVEZ-T7A

For further information on Renesas half-bridge FET drivers or to enquire about sample prices, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) for further supply details.