company blog about Mingjiada Supply ROHM Gallium Nitride Power Devices, Supply GaN HEMT And GaN HEMT Power Stage IC

Mingjiada Supply ROHM Gallium Nitride Power Devices, Supply GaN HEMT And GaN HEMT Power Stage IC

Shenzhen Mingjiada Electronics Co., Ltd. — Long-term supplier of [ROHM] GaN power devices, including: GaN HEMTs, GaN HEMT power stage ICs, GaN gate drivers and other products. Mingjiada Electronics stocks a wide range of mainstream models and supports both small-batch samples and large-volume orders. Backed by an efficient logistics system, we ensure rapid product delivery.

I. GaN HEMTs
1. 150V GaN HEMT
ROHM has successfully increased the maximum gate-source rated voltage to 8V, making these products ideal for a wide range of industrial equipment, including base stations and data centres.
2. 650V GaN HEMT
As a 650V-rated GaN device, it achieves an industry-leading Figure of Merit (FOM), helping to improve power supply efficiency whilst significantly reducing switching losses, thereby enabling further efficiency gains in various power supply systems.
Models recommended by Mingjiada Electronics:
GNP3120TJ-Z
GNP3070TEC-Z
GNP3050TEC-Z
GNP3040TEC-Z
GNP3018TF-Z

II. GaN HEMT Power Stage IC
ROHM’s GaN HEMT Power Stage IC provides an ideal solution for various power electronics systems requiring high power density and efficiency. These products integrate next-generation GaN HEMT power devices with gate drivers optimised to maximise the performance of the GaN HEMTs. They support a wide input voltage range of 2.5 V to 30 V and can be used in conjunction with various controller ICs. These features and advantages enable them to replace traditional discrete power switches such as super-junction MOSFETs.
Mingjiada Electronics Recommended Models:
BM3G115MUV-LB
BM3G107MUV-LB
BM3G005MUV-LB

III. Gate Drivers for GaN
Thanks to their high-speed switching capability, GaN devices are ideal for energy-saving and miniaturisation applications.
ROHM’s GaN gate drivers are designed to maximise the high-speed switching performance of these devices and simplify design by achieving short propagation delays and narrow pulse widths.
Models recommended by Mingjiada Electronics:
BM6GD11BFJ-LB – 2500 Vrms isolation voltage, 1-channel gate driver, providing current isolation for GaN HEMTs

For further information on [ROHM] GaN power devices or to enquire about sample prices, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) for more supply details.