company blog about Mingjiada Supply SK Hynix And SAMSUNG DDR4 SDRAM ETT Memory Chips

Mingjiada Supply SK Hynix And SAMSUNG DDR4 SDRAM ETT Memory Chips

Shenzhen Mingjiada Electronics Co., Ltd. — Supplies a wide range of DDR4 SDRAM ETT memory chips, covering the two major brands: Samsung and SK Hynix.

The main DDR4 ETT memory chip models and specifications currently available from Mingjiada Electronics are as follows:
SK Hynix DDR4 SDRAM
H5AN4G8NBJR-VKC — 4Gb DDR4 SDRAM memory chip, utilising a 78-ball FBGA package, featuring a 512Mx8 organisation, supporting a data transfer rate of 2666Mbps and an operating voltage of 1.2V.
H5AN4G6NBJR-UHC — High-density, low-power DDR4 synchronous dynamic random-access memory (SDRAM). Manufactured using advanced semiconductor processes, this chip offers 4Gb (512MB) of storage capacity in a compact FBGA-96 package.
H5AN4G6NBJR-VKC – 4Gb (i.e. 512MB) DDR4 SDRAM memory chip, manufactured using high-speed synchronous CMOS technology, primarily intended for main memory applications requiring high storage density and high bandwidth.
H5AN8G6NDJR-XNC – 8Gb DDR4-3200 memory die, featuring a 512M×16 organisation, supporting a maximum data transfer rate of 3200Mbps, based on a 1.2V low-voltage design, in an FBGA-96 package (13×7.5mm)
H5AN8G8NDJR-XNC – 8Gb (1GB) DDR4 SDRAM memory chip, manufactured using a high-speed synchronous CMOS process, with an internal organisation of 1G × 8-bit (8-bit width) and utilising an 8-bit prefetch architecture to achieve high-bandwidth data transfer.
H5AN8G8NCJR-XNC – 8Gb DDR4 SDRAM memory, in a 78-ball FBGA package, operating at 1.2V, supporting a maximum data rate of 3200Mbps (DDR4-3200), with a 1G × 8-bit organisation.
H5ANAG6NCJR-XNC – 16Gb DDR4 SDRAM memory module with a capacity of 16Gb, organised as 1G × 16, utilising a RoHS-compliant BGA-96-ball package. The data rate is specified as 3200 MT/s, with a maximum clock speed of 1600 MHz.
H5ANAG8NCJR-XNC – 16Gb (2GB) DDR4 SDRAM memory chip, operating at standard DDR4 voltage (typically 1.2V), manufactured using SK Hynix’s 1z nm (D1Z) process, in a 78-ball FBGA package.

SAMSUNG DDR4 SDRAM
K4A8G085WC-BCTD — 8 Gb DDR4 SDRAM memory chip, operating at 1.2 V, in a 78-FBGA package, with an operating temperature range of 0 to 85 °C
K4A4G165WF-BCTD — High-performance 4 Gb DDR4 SDRAM memory chip with a maximum clock frequency of 1.066 GHz.
K4A4G165WE-BCRC — 4 Gb (512 MB) DDR4 SDRAM memory die, featuring a 256M × 16-bit architecture and a 96-ball FBGA package, operating at a standard voltage of 1.2 V and supporting a maximum data transfer rate of DDR4-2400 (2400 Mbps).
K4A4G165WF-BCWE – 4Gb (512MB) DDR4 SDRAM memory chip, featuring a 256M × 16-bit architecture and a 96-ball FBGA package, operating at a standard voltage of 1.2V and supporting a maximum data transfer rate of DDR4-3200 (3200 Mbps).
K4A8G165WB-BCRC – 8Gb DDR4 memory chip, utilising a 96-ball FBGA package, with a nominal speed of 2400 Mbps and an operating voltage of 1.2V.
K4A8G165WC-BCTD — 8Gb (1GB) DDR4 SDRAM memory chip, featuring a 512M × 16-bit architecture and a 96-ball FBGA package, operating at a standard voltage of 1.2V. This chip belongs to Samsung’s C-Die product series and supports a maximum data transfer rate of DDR4-2666 (2666 Mbps).

These memory chips are widely used in servers, data centres, network communications, industrial control and automotive electronics. Mingjiada Electronics offers both small-batch samples and bulk supply services. For an accurate quotation, please provide the chip brand, capacity, bit width, speed, package type and purchase quantity.
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