company blog about Mingjiada Supply TI GaN Power Stages, Supply Gallium Nitride Power-FET

Mingjiada Supply TI GaN Power Stages, Supply Gallium Nitride Power-FET

Shenzhen Mingjiada Electronics Co., Ltd. — a long-standing supplier of [TI] gallium nitride (GaN) power stage products, covering solutions with integrated gate drivers and GaN power devices. Mingjiada Electronics stocks a range of mainstream models and supports both small-batch samples and large-volume orders. Backed by an efficient logistics system, we ensure rapid product delivery.

[TI] Gallium Nitride (GaN) Power Stage
Overview: TI’s gallium nitride (GaN) FET series features integrated gate drivers and GaN power devices, delivering efficient GaN solutions that offer reliability and cost advantages throughout the entire product lifecycle. GaN transistors switch much faster than silicon MOSFETs, thereby enabling lower switching losses. TI’s GaN power stages can be used in a wide range of applications, including telecommunications, servers, motor drivers and laptop adaptors, as well as on-board chargers for electric vehicles.

Advantages of TI’s GaN Technology
Faster switching speeds than discrete GaN FETs
- TI’s GaN FETs with integrated drivers achieve switching speeds of 150 V/ns. Combined with low-inductance packaging, these switching speeds reduce losses, provide clean switching and minimise ringing.
Smaller magnetic components and higher power density
- TI’s GaN devices, with their faster switching speeds, help you achieve switching frequencies exceeding 500 kHz, thereby reducing the size of magnetic components by up to 60 per cent, enhancing performance and lowering system costs.
Built for reliability
- TI’s GaN devices utilise a proprietary silicon-based GaN process and have undergone over 80 million hours of reliability testing; combined with protection features, they are designed to ensure the safety of high-voltage systems.

Mingjiada Electronics is a long-term supplier of [TI] gallium nitride (GaN) power devices, including but not limited to:
LMG2652H – 650V 140mΩ GaN power FET half-bridge with driver (part number: LMG2652HRFBR)
LMG2610 – a 650V GaN power FET half-bridge with integrated driver, protection and current sensing functions, suitable for ACF (part numbers: LMG2610RRGR, LMG2610RRGT)
LMG3622 – 700V 106mΩ GaN power FET with integrated driver and protection (Part number: LMG3622REQR)
LMG3624 – 700V, 155mΩ GaN power FET with integrated driver, protection and current sensing (Available part numbers: LMG3624REQR, LMG3624YREQR, LMG3624ZREQR)
LMG2640 – 650V, 105mΩ GaN power FET half-bridge with integrated driver, protection and current sensing functions (part number: LMG2640RRGR)
LMG2650 – 650V, 95mΩ GaN power FET half-bridge with integrated driver, protection and current sensing functions (part numbers: LMG2650RFBR)
LMG5200 – 80V GaN half-bridge power stage (part numbers: LMG5200MOFR, LMG5200MOFT)
LMG3422R050 – 600V, 50mΩ GaN FET with integrated driver, protection and temperature reporting (Part numbers: LMG3422R050RQZR, LMG3422R050RQZT)
LMG3650R070 – 650V 70mΩ GaN FET with integrated driver and protection, in TOLL package (Part numbers: LMG3650R070KLAR)

For further details regarding TI’s gallium nitride (GaN) power stage products or to enquire about sample prices, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) for further supply information.