Shenzhen Mingjiada Electronics Co., Ltd. supplies the Navitas NV6247C, a GaNFast™ half-bridge power IC featuring GaNSense™ technology.
I. NV6247C Product Overview
The NV6247C is a flagship 650V integrated half-bridge power IC that implements Navitas’ dual-core GaNFast™+GaNSense™ technology. It belongs to the NV624X half-bridge product family and, compared to the NV6245C (dual-FET 275mΩ). It features a combined on-resistance of 160mΩ across two GaN FETs and operates within a power range of 65–400W. By integrating the dual GaN power FETs, gate drivers, level shifters, lossless sampling and self-protection circuits required for an integrated half-bridge topology. It replaces the fragmented solution of traditional discrete MOSFETs + drivers + sampling resistors + peripheral protection components, serving as a standardised power building block for fast-charging power supplies, totem-pole PFC, BLDC brushless motor drives and large-screen power supplies. The device is housed in a 6×8mm 32-pin thermally enhanced PQFN surface-mount package, featuring dual large-area exposed thermal pads to optimise heat dissipation. It operates within a temperature range of -55°C to +150°C, offers full-chip 2kV ESD protection, and supports a wide VCC supply voltage range of 10–24V, meeting the stringent safety and temperature control requirements of consumer electronics, small household appliances, and low-power industrial equipment.
II. NV6247C Core Architecture: GaNFast™ Monolithic Integrated Half-Bridge Core
GaNFast™, Nanowei’s mature gallium nitride wafer process, forms the foundation of the NV6247C’s performance. It employs a monolithic design integrating GaN and driver circuits within a single package, thereby eliminating at source the issues of gate oscillation, switching glitches and false triggering caused by gate loop parasitic inductance in discrete solutions:
The NV6247C incorporates dual 650V high-performance GaN power switches: a single chip integrates both high-side and low-side GaNFast™ gallium nitride FETs, with a combined on-resistance of 160mΩ, rated at 650V with a peak transient withstand voltage of up to 800V. Compared to silicon MOSFETs of the same specification, switching losses are reduced by over 60%, supporting ultra-high switching frequencies of up to 2MHz. This facilitates the miniaturisation of magnetic components such as power transformers and inductors, reducing the overall size of the power supply unit by over 30%;
Native integration of high-side and low-side drivers and bootstrap circuits: On-chip integration of high-side level shifting and bootstrap voltage regulation modules eliminates the need for external high-voltage bootstrap diodes and associated capacitors; only digital logic level inputs are required externally (compatible with standard 3.3V controller signals), Developers need not debug high-side and low-side drive timing; simply connecting the main controller’s PWM signal directly enables half-bridge operation, reducing the hardware BOM by over 60% and PCB footprint by 61%;
Optimised soft-switching topology adaptation: Process tuning has been performed for mainstream soft-switching topologies such as LLC resonant, AHB active clamping and totem-pole PFC, significantly reducing switching spikes and dv/dt interference, thereby lowering EMI remediation costs. This makes it the preferred solution for 120–240W USB-PD 3.1 high-power fast charging and LCD TV power supplies.
III. NV6247C Breakthrough Technology: GaNSense™ – Proprietary Lossless Sensing and Ultra-Fast Autonomous Protection
GaNSense™ represents the core differentiator of the NV6247C compared to standard integrated GaN half-bridge solutions. It breaks away from the traditional current detection architecture reliant on sampling resistors, achieving two key capabilities: on-chip lossless current sensing and nanosecond-level autonomous fault protection. It is also a key technology for the intelligent operation of wide-bandgap power ICs:
1. Lossless On-chip Current Sensing
Abandoning the traditional design of series power sampling resistors (Rcs), this technology utilises the channel characteristics of the GaN wafer to sense current in situ. With zero sampling loss and no heat generation from sampling resistors, it not only improves the power supply’s full-load efficiency by 0.5%–1.2% but also eliminates the need for high-power sampling resistors on the PCB, simplifying thermal management design; The sampling signal can be directly routed to the MCU for closed-loop constant-current control and power monitoring, making it widely applicable to fast-charging constant-power output and motor current-limiting control scenarios.
2. 30ns Ultra-Fast Autonomous Protection (No MCU Intervention Required)
GaNSense™ incorporates on-chip fault detection logic, with overcurrent (OCP), overtemperature (OTP), short-circuit protection and under-voltage lockout (UVLO) all managed via a fully autonomous hardware closed-loop system: Upon detection of a short circuit or through-failure, both GaN switches are instantly shut down within 30 ns. This represents a nearly 200-fold improvement over the 5–10 μs shutdown speed of discrete solutions, enabling self-locking protection without waiting for a shutdown command from the main control chip, thereby eliminating the risk of device destruction at the hardware level; The chip features built-in global temperature sensing; if the junction temperature exceeds the threshold, it automatically reduces power or locks the output, significantly enhancing reliability under harsh operating conditions, making it particularly suitable for high-risk applications such as motor stalling and power supply short circuits.
IV. Key Electrical Parameters of the NV6247C
Rated voltage: 650V (peak 800V)
Total on-resistance of dual FETs: 160mΩ
Recommended operating power: 65W–400W
Operating switching frequency: 0–2MHz
Supply voltage (VCC): 10V–24V
Operating temperature: –55°C to +150°C
Package size: 6×8mm PQFN-32 (dual heat sink pads)
Protection rating: 2kV ESD, OCP/OTP/bypass/UVLO quadruple protection
V. Mainstream Application Scenarios for the NV6247C
High-power USB-C fast-charging power supplies (100–240W): Suitable for PD 3.1 240W multi-port GaN chargers, utilising AHB/LLC topologies. Leveraging high-frequency characteristics to reduce transformer size, enabling compact, high-power fast charging;
BLDC Motor Drivers for Household Appliances (100–400W): Blenders, inverter-controlled refrigerator compressors, indoor air conditioning unit fans, and water pumps. Three-phase inverter single-arm half-bridge configurations, or multiple NV6247C chips combined to form a three-phase full-bridge inverter. GaNSense short-circuit rapid protection is suitable for motor applications with frequent stall conditions;
Industrial & AV Power Supplies: 200W+ built-in power supplies for LCD televisions/monitors, totem-pole PFC pre-boost circuits, and switching power supplies for small industrial control equipment;
Energy Storage Auxiliary Power Supplies: Low-power DC-DC inverter pre-stages for portable energy storage, and auxiliary power supply modules for outdoor power stations.
VI. Summary of the NV6247C’s Core Advantages
Minimal hardware development: A single IC replaces over 10 discrete components, shortening the power supply R&D cycle, enabling “one-time layout for mass production”, and reducing component procurement and assembly costs;
Maximised Energy Efficiency: Combining GaNFast’s low switching losses with GaNSense’s lossless sampling, the system achieves a full-load efficiency exceeding 94%, delivering over 5% greater energy savings compared to silicon-based solutions;
Exceptional System Reliability: 30ns hardware-based self-protection combined with a gate-less oscillation architecture significantly reduces post-sales failure rates, making it suitable for demanding automotive peripherals and industrial small appliances requiring long-term continuous operation;
Miniaturisation: The 2MHz high-frequency operation substantially reduces the size of magnetic components, facilitating slim and compact designs for chargers and motor controllers, aligning with the trend towards miniaturisation in consumer electronics.
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