company blog about New and Original RF Transistor [GTVA262701FA-V2-R2] RF Junction Gate Field Effect Transistor

Shenzhen Mingjiada Electronics Co., Ltd. sells brand new and original RF Transistor [GTVA262701FA-V2-R2] RF Junction Gate Field Effect Transistor (RF JFET) Transistor 270W GaN HEMT 48V 2496 to 2690MHz

Description
The GTVA262701FA-V2-R2 is a 270 Watt Silicon Carbide Gallium Nitride High Electron Mobility Transistor (HEMT) for multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a lug flange-free thermally enhanced surface mount package.

Features
- SiC HEMT Gallium Nitride Technology
- Input matching
- Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2690 MHz, 48 V
- Output power at P3dB = 270 W
- Efficiency = 66
- Gain = 18.1 dB
- Human Body Model Level 1B (ANSI/ESDA/JEDEC JS-001 compliant)
- Capable of handling 10:1 VSWR @ 48 V, 60 W (WCDMA) output power
- Lead-free, RoHS compliant

Category: Transistors
Series: GaN
Package: Tape and Reel (TR)
Part Status: On Sale
Technology: HEMT
Frequency: 2.62GHz ~ 2.69GHz
Gain: 17dB
Voltage - Test: 48 V
Rated Current (Amps): -
Noise Figure: -
Current - Test: 320 mA
Power - Output: 270W
Voltage - Rated: 125 V
Mounting Type: Surface Mount
Package/Housing: H-87265J-2
Supplier Device Package: H-87265J-2
Base Product Number: GTVA262701