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ON NCV57001DWR2G Isolated High Current Single Channel IGBT Gate Driver
Latest company news about ON NCV57001DWR2G Isolated High Current Single Channel IGBT Gate Driver

ON NCV57001DWR2G Isolated High Current Single Channel IGBT Gate Driver

 

In today's power electronics and industrial automation fields, efficient and reliable IGBT (Insulated Gate Bipolar Transistor) gate drivers are key components for achieving power conversion and control. Shenzhen Mingjiada Electronics Co., Ltd., as a leading distributor of electronic components in China, supplies ON NCV57001DWR2G isolated high current single channel IGBT gate drivers, providing high-performance solutions for industrial motor drives, new energy inverters, uninterruptible power supplies (UPS) and other applications.

 

NCV57001DWR2G Product Overview
NCV57001DWR2G is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCV57001DWR2G accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCV57001 provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 VIORM (working voltage) capabilities. NCV57001DWR2G is available in the wide−body SOIC−16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.

 

latest company news about ON NCV57001DWR2G Isolated High Current Single Channel IGBT Gate Driver  0

 

Features Of NCV57001DWR2G
High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages
Low Output Impedance for Enhanced IGBT Driving
Short Propagation Delays with Accurate Matching
Active Miller Clamp to Prevent Spurious Gate Turn−on
DESAT Protection with Programmable Delay
Negative Voltage (Down to −9 V) Capability for DESAT
Soft Turn Off During IGBT Short Circuit
IGBT Gate Clamping During Short Circuit
IGBT Gate Active Pull Down
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range including Negative VEE2
3.3 V to 5 V Input Supply Voltage
Designed for AEC−Q100 Certification
5000 V Galvanic Isolation (to meet UL1577 Requirements)
1200 V Working Voltage (per VDE0884−10 Requirements)
High Transient Immunity
High Electromagnetic Immunity
These Devices are Pb−Free, Halogen Free and are RoHS Compliant

 

Key Performance Parameters Of NCV57001DWR2G
High output current capability: NCV57001DWR2G provides a peak output current of up to ± 4A, which can quickly switch large capacity IGBTs and reduce switching losses
Wide working voltage range: NCV57001DWR2G supports gate drive voltage up to 20V, suitable for various power devices
High isolation voltage: NCV57001DWR2G provides electrical isolation of 3750Vrms (UL1577 certified) to ensure system safety
Short propagation delay: typical value is only 80ns, ensuring precise switch control timing
Undervoltage lockout protection (UVLO): NCV57001DWR2G prevents power devices from operating under low voltage to avoid damage
Wide working temperature range: -40 ° C to+125 ° C, suitable for harsh industrial environments
Integrated desaturation detection: NCV57001DWR2G provides IGBT short-circuit protection function to enhance system reliability

 

Typical application scenarios of NCV57001DWR2G

Industrial motor drive system:
ac servo driver
frequency converter
Industrial Robot Control System
CNC machine spindle drive

 

New energy and power electronics applications:
PV Inverter
Wind power converter
Electric vehicle charging station
Car DC-DC converter

 

Power infrastructure:
Uninterruptible Power Supply (UPS)
Switching Power Supply (SMPS)
Power transmission and distribution system
active power filter

 

Other industrial applications:
Welding equipment
Induction heating system
Medical equipment power supply
Railway traction system

 

In these applications, NCV57001DWR2G can provide reliable isolated driving, ensuring safe isolation between control circuits and power circuits, while providing sufficient driving capability to optimize the switching performance of power devices.

 

Simplified Block Diagram Of NCV57001DWR2G

latest company news about ON NCV57001DWR2G Isolated High Current Single Channel IGBT Gate Driver  1

 

Simplified Application Schematics Of NCV57001DWR2G

latest company news about ON NCV57001DWR2G Isolated High Current Single Channel IGBT Gate Driver  2

 

Pub Time : 2025-05-06 13:12:10 >> News list
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