company blog about ON NVGS3443T1G 4.4A 20V Single P-Channel Power MOSFET Transistors

ON NVGS3443T1G 4.4A 20V Single P-Channel Power MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd, as a global well-known electronic components distributor, supplies NVGS3443T1G 4.4A 20V single P-channel power MOSFET transistor in stock, which is widely used in power management system of various electronic devices.

Product Description Of NVGS3443T1G
NVGS3443T1G is Automotive 20V, 4.4A, 65mΩ, Single P-Channel Power MOSFET Transistors. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Specification Of NVGS3443T1G
Transistor Polarity:P-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:4.4 A
Rds On - Drain-Source Resistance:65 mOhms
Vgs - Gate-Source Voltage:- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage:1.5 V
Qg - Gate Charge:15 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2 W
Channel Mode:Enhancement
Unit Weight:20 mg

Key Electrical Parameters Of NVGS3443T1G Include:
Drain-source voltage (Vdss): 20V - this represents the maximum drain-to-source voltage that the NVGS3443T1G device can safely withstand
Continuous drain current (Id): NVGS3443T1G is capable of up to 3.1A at 25°C ambient temperature and can support up to 4.4A under certain conditions
On-resistance (Rds(on)): 65mΩ maximum at Vgs=4.5V, Id=4.4A - this parameter directly affects the device's conduction loss.
Gate Threshold Voltage (Vgs(th)): 1.5V maximum (measured at Id=250μA)
Gate charge (Qg): 15nC max at Vgs=4.5V - this parameter affects the switching speed of the device
Input capacitance (Ciss): 565pF maximum at Vds=5V

The NVGS3443T1G MOSFET has a wide operating temperature range from -55°C to +150°C (junction temperature), making it adaptable to a wide range of harsh environmental conditions. It is worth noting that the NVGS3443T1G P-channel MOSFETs typically have higher on-resistance than equivalent N-channel devices due to the fact that the holes (P-channel majority carriers) have a higher resistance than the electrons (N-channel carriers). This is due to the physical property that holes (majority carriers in the P-channel) have a lower mobility than electrons (majority carriers in the N-channel).

Features Of NVGS3443T1G
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP6 Surface Mount Package
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant

NVGS3443T1G P-Channel MOSFET Structure Characteristics:
The structure of the NVGS3443T1G P-channel power MOSFET is usually designed with vertical conductivity to optimise current capability and on-resistance. Unlike N-channel LDMOS (lateral double-diffusion MOSFETs), power P-channel MOSFETs generally have a vertical conductive structure, but with the opposite conductivity type.

In the NVGS3443T1G, the basic cell structure consists of:
N-type substrate: serves as the support substrate for the device
P-type epitaxial layer: grown on the N-type substrate to form the drain region
N-type body region: formed in the P-type epitaxial layer by diffusion process
P+ source region: formed in the N-type body region by high concentration of P-type doping
Gate structure: consists of a polysilicon gate and a gate oxide layer over the top of the channel region

This vertical structure allows current to flow vertically from the source at the top to the drain at the bottom (via the substrate lead), making full use of the entire cross-sectional area of the NVGS3443T1G chip, resulting in lower on-resistance and improved current handling.

Applications Of NVGS3443T1G
Portable electronic devices: including smartphones, tablets, wearables, etc., taking advantage of their small size and low gate drive requirements
Power management systems: for power path control, reverse polarity protection and OR-ing functions, leveraging the advantages of P-channel MOSFETs in high-end switching
Industrial control systems: small motor drives, relay replacement and low power actuator control
Consumer electronics: power switching in e.g. digital cameras, portable audio devices and home appliances
Automotive electronics: standards-compliant versions are available for low-power automotive applications such as seat adjustment and sunroof control

End Product Of NVGS3443T1G
Cellular and Cordless Telephones
PCMCIA Cards