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ON NXH020P120MNF1PG Silicon Carbide MOSFET Half Bridge Modules
Product Description of NXH020P120MNF1PG
NXH020P120MNF1PG is a SiC MOSFET module containing a 20 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.
Specifications of NXH020P120MNF1PG
Technology: SiC
Mounting Style: Press Fit
Package/Case: Module
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Id - Continuous Drain Current: 51 A
Rds On - Drain-Source Resistance: 30 mOhms
Vgs - Gate-Source Voltage: - 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 211 W
Fall Time: 8.4 ns
Rise Time: 8.8 ns
Typical Delay Time: 8.4 ns
Typical Turn-Off Delay Time: 105 ns
Typical Turn-On Delay Time: 44 ns
Feature of NXH020P120MNF1PG
20 m/1200 V SiC MOSFET Half Bridge
Thermistor
Options with Pre−applied Thermal Interface Material (TIM) andwithout Pre−applied TIM
Press−fit Pins
End Product of NXH020P120MNF1PG
Electric Vehicle Charger
Energy Storage System
Solar Inverter 3-phase
Uninterruptible Power Supply
Applications of NXH020P120MNF1PG
Solar Inverter
Uninterruptible Power Supplies
Electric Vehicle Charging Stations
Industrial Power
Schematic Diagram of NXH020P120MNF1PG