company blog about ON Semiconductor Silicon Carbide Module NXH007F120M3F2PTHG EliteSiC, 7 Ohm SiC M3S MOSFET, 1200 V

Shenzhen Mingjiada Electronics Co., Ltd. long-term recycling ON Semiconductor Silicon Carbide Module NXH007F120M3F2PTHG EliteSiC, 7 Ohm SiC M3S MOSFET, 1200 V, 4-package full-bridge topology, F2 package

Introduction

The NXH007P120M3F2PTHG is a power supply module in an F2 package containing a 7 mohm / 1200 V SiC MOSFET full bridge and thermistor with HPS DBC.The SiC MOSFET switches are driven by 18V-20V gates using M3S technology.

Features

Outstanding FOM [ = Rdson * Eoss ]

15V to 18V gate drive

7 Ohm / 1200 V M3S SiC MOSFET Full Bridge

Applications

DC to AC Conversion

DC-DC Conversion

AC-DC Conversion

NXH007F120M3F2PTHG Schematic

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The company only recycles regular channel sources, such as agents, traders, terminal factories, etc. We do not accept sources that are not regular channels.

If you have excess inventory to dispose of, please feel free to send your inventory list to chen13410018555@163.com or call us to discuss.

Contact Person: Mr Chen

Mobile phone number: +86 13410018555

Email: sales@hkmjd.com

Company website: www.hkmjd.com