company blog about ON UJ3C120080K3S 1200V N-Channel Silicon Carbide Power MOSFET Transistor

ON UJ3C120080K3S 1200V N-Channel Silicon Carbide Power MOSFET Transistor

Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned independent distributor of electronic components, offers immediate availability of ON Semiconductor's UJ3C120080K3S 1200V N-channel silicon carbide power MOSFET transistor. Featuring a unique common-source common-gate configuration and exceptional switching performance, it provides an ideal solution for modern power conversion systems.

【Key Features and Technical Innovations of the UJ3C120080K3S】

The UJ3C120080K3S is a high-performance MOSFET utilising advanced silicon carbide technology, boasting several noteworthy technical characteristics. Housed in a TO-247-3 package, this device demonstrates outstanding performance in high-voltage, high-power applications.

The most prominent advantage of the UJ3C120080K3S lies in its 1200V high-voltage withstand capability, combined with an exceptionally low on-resistance of just 80mΩ. This significantly reduces conduction losses in high-voltage applications, enhancing overall system efficiency.

Regarding switching performance, the UJ3C120080K3S supports high-frequency operation with a continuous drain current of up to 33A, making it particularly suitable for applications demanding high power density.

The UJ3C120080K3S employs an innovative common-source, common-gate configuration, integrating an advanced SiC JFET with a specially optimised silicon MOSFET within a single package. This design ingeniously combines the strengths of both technologies: enabling normally-off operation and straightforward gate drive characteristics while retaining the inherent high efficiency, speed, and high-temperature capability of SiC material.

Compared to conventional silicon-based MOSFETs or IGBTs, this SiC MOSFET demonstrates multiple significant advantages. Its extremely low on-resistance, ranging from 80mΩ to 100mΩ, effectively reduces conduction losses.

The UJ3C120080K3S supports higher switching frequencies, enabling designers to reduce the size of magnetic components and passive devices within the system, thereby achieving greater power density.

The UJ3C120080K3S further integrates ESD and gate protection functions, delivering enhanced reliability. Its wide operating junction temperature range from -55°C to +175°C renders it suitable for high-temperature environments. Additionally, it exhibits outstanding body diode performance (forward voltage drop <2V) and excellent reverse recovery characteristics.

Another significant advantage of silicon carbide technology is its exceptionally low reverse recovery charge (Qrr) of just 10nC, which helps reduce switching losses and enhances system frequency response.

【Detailed Key Performance Parameters of UJ3C120080K3S】

High-voltage capability: Rated drain-source voltage (Vdss) of 1200V, suitable for high-voltage applications such as three-phase industrial systems and photovoltaic inverters

High Current Capacity: Continuous drain current (Id) up to 33A at 25°C

Low On-State Losses: Maximum drain-source on-resistance of just 80mΩ to 100mΩ (tested at 20A, 12V)

Fast Switching Characteristics: Rise time and fall time both 14ns, typical turn-on delay 22ns, turn-off delay 61ns

Optimised gate charge: Gate charge (Qg) of just 51nC@15V minimises drive losses

These parameters collectively form the foundation of the UJ3C120080K3S's exceptional performance, enabling outstanding operation in high-efficiency power conversion applications. Compared to silicon-based super-junction MOSFETs of equivalent specifications, it reduces switching losses by up to 80%, significantly enhancing system efficiency.

【UJ3C120080K3S's Extensive Application Coverage】

Within the new energy vehicle sector, this device can be utilised in onboard chargers, motor drives, and DC-DC converters, contributing to enhanced electric vehicle range and charging efficiency.

Photovoltaic power generation and smart grid applications similarly benefit from this silicon carbide MOSFET's high performance. Within photovoltaic inverters and energy storage systems, the UJ3C120080K3S enhances energy conversion efficiency, while ensuring stable and reliable operation in power transmission and distribution equipment.

For industrial power supply applications, the UJ3C120080K3S is suitable for high-efficiency power conversion and motor control, meeting the stringent demands of industrial automation for power density and energy efficiency. Even within the rail transport sector, this device can be deployed in traction inverters and auxiliary power systems to meet high reliability demands.

Compared to traditional silicon-based power devices, the UJ3C120080K3S significantly reduces system size and weight across these applications while enhancing overall energy efficiency, delivering competitive advantages for end products.