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Original TI UCC21550BQDWRQ1 Automotive Reinforced Isolation Dual-Channel Gate Driver
Description
UCC21550BQDWRQ1 is an isolated dual-channel gate driver with programmable dead time and wide temperature range. The device uses 4A peak pull current and 6A peak fill current to drive power MOSFET, SiC, GaN, and IGBT transistors.
UCC21550BQDWRQ1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation layer with a minimum common mode transient immunity (CMTI) of 125V/ns.
Features
Universal: dual-channel low-side, dual-channel high-side or half-bridge drivers
Has the following characteristics in accordance with the AEC-Q100 standard
Device temperature Level 1
HBM ESD Class H2
CDM ESD class C4B
Junction temperature range: -40 °C to +150°C
Up to 4A peak pull current and 6A peak fill current output
Common mode transient immunity (CMTI) greater than 125V/ns
Up to 25V VDD output drive power
5V or 8V VDD UVLO option
Switch parameters:
33ns Typical propagation delay
5ns maximum pulse width distortion
10µs maximum VDD power-on delay
UVLO protection for all power supplies
Fast disable for power timing
Applications
Car battery charger
High voltage DC/DC converter
Automotive HVAC, body electronics