company blog about Recycle Navitas SiCPAK™ SiC Power Module:SiCPAK™ F Series,SiCPAK™ G Series

Recycle Navitas SiCPAK™ SiC Power Module:SiCPAK™ F Series,SiCPAK™ G Series

Shenzhen Mingjiada Electronics Co., Ltd., a leading player in the electronic component recycling industry, provides comprehensive recycling solutions through professional services, competitive pricing, and a principled approach.

Recycling Advantages:

I. Price Advantage: Premium buyback rates, maximising value

Leading quotations: Leveraging real-time global market data, we offer competitive pricing 5%-15% above market averages, with premium valuations for discontinued and scarce models.

Precise valuation: Based on end-user demand and market databases, ensuring fair and reasonable quotations that maximise inventory value.

2. Expertise Advantage: Seasoned Team, Precise Evaluation

Technical Team: A seasoned team with over 20 years of industry experience, proficient in identifying all IC models, packaging, batches, and quality grading.

Comprehensive Coverage: Extensive recycling scope encompassing nearly all mainstream IC categories, including MCUs, memory, FPGAs, analogue ICs, RF ICs, and automotive/industrial/AI chips.

III. Efficiency Advantage: Rapid Response, Swift Settlement

Prompt Response: Initial assessment and quotation completed within 1-4 hours; on-site inspection and transaction finalised within 24 hours.

Expedited Payment: Cash or wire transfer settled within 48 hours post-inspection confirmation, enabling rapid capital recovery.

Streamlined Process: Efficient end-to-end workflow from listing submission, evaluation, inspection to payment, minimising client time and labour costs.

IV. Flexibility Advantage: Diverse Models, Tailored Solutions

Transaction Modes: Supports cash purchases, on-site collection, consignment, agency sales, liquidation, and more, accommodating bulk/scattered/long-term collaboration needs.

Flexible Minimum Quantities: Accepts small batches, covering scenarios like R&D surplus, production remnants, and slow-moving stock.

Diverse Settlement: Supports multi-currency transactions, accommodating global clients.

V. Network Advantage: Global Reach, Convenient Service

Cross-Border Services: Offers worldwide door-to-door logistics, on-site inspection, and DHL/UPS global logistics with carriage collect, enabling localised rapid response.

VI. Security & Compliance: Legitimate Transactions, Protected Rights

Channel Compliance: Procures exclusively from authorised agents, end-manufacturers, and licensed distributors, rejecting infringing/unidentified components.

Information Confidentiality: Strictly safeguards client inventory and commercial data, ensuring security.

Standardised Processes: Formal contracts ensure transparent, lawful transactions protecting both parties' interests.

I. Core Technology of SiCPAK™ Silicon Carbide Power Modules

The Navitas SiCPAK™ series of silicon carbide (SiC) power modules leverage proprietary GeneSiC™ Trench-Assisted Planar (TAP) technology and innovative epoxy encapsulation processes. This overcomes reliability limitations inherent in conventional silicone-encapsulated SiC modules, delivering exceptional energy efficiency, high-temperature stability, and harsh-environment adaptability. These modules represent core components for upgrading high-power power electronic equipment. Compared to conventional SiC modules and traditional IGBT modules, this series achieves triple breakthroughs in conduction losses, switching losses, and operational lifespan. It is widely applicable across high-voltage, high-power scenarios in new energy, industrial, and transportation sectors. The F-series and G-series, as core product lines, cover application demands from medium-low to high power through differentiated specifications.

1. Core Packaging Technology: The Disruptive Advantages of Epoxy Resin Encapsulation

The SiCPAK™ series abandons the industry's mainstream silicone potting solution, adopting proprietary epoxy resin potting technology to fundamentally resolve reliability pain points in traditional modules. Its core advantages are evident:

- Substantially enhanced thermal cycling reliability: Thermal shock reliability improved by over 10 times, power cycle life extended by over 60%, effectively suppressing cracking issues caused by thermal expansion and contraction of DBC substrates, ensuring long-term stable module operation;

- Optimised thermal management: Epoxy resin thermal conductivity exceeds silicone by 10 times with superior thermal resistance stability, enabling efficient module heat dissipation for continuous high-temperature operation;

- Maximum environmental protection: Completely prevents moisture and contaminant ingress with outstanding moisture resistance and corrosion protection, meeting demanding industrial and outdoor conditions;

- Outstanding electrical insulation: Both module-level and chip-level components pass THB (HV-H3TRB) reliability certification, delivering superior isolation withstand voltage performance for high-voltage, high-power topologies.

2. Core Chip Technology: Energy Efficiency Breakthrough with TAP Architecture

Featuring GeneSiC™ fourth-generation TAP silicon carbide MOSFET chips, this design employs multi-step electric field management to optimise voltage stress and blocking performance. Compared to conventional trench-type and planar SiC chips, it achieves a balance between performance and reliability:

- Reduced conduction losses at elevated temperatures: Conduction resistance decreases by 20% under high-temperature conditions, effectively mitigating performance degradation and enabling sustained operation at 175°C junction temperature;

- Significantly Optimised Switching Losses: 15% reduction in switching losses, faster switching speeds, cleaner waveforms, and support for higher operating frequencies, enhancing overall power density;

- Comprehensive Robustness Enhancements: Exceptional short-circuit withstand capability, superior avalanche (UIS) performance, stable gate threshold voltage, and excellent current sharing, suitable for demanding high-voltage and high dv/dt conditions.

II. SiCPAK™ F Series Silicon Carbide Power Modules: Compact and Efficient Solution

The SiCPAK™ F Series targets compact medium-to-low power applications. Its miniaturised package design balances power density with installation flexibility, catering to scenarios demanding stringent volume and efficiency requirements. Primarily operating at 1200V, it covers mainstream half-bridge and full-bridge topologies, making it an ideal choice for medium-to-low power power electronic equipment.

1. Core Specifications

Package Dimensions: 33.8mm × 65mm, compact small-form-factor design

Rated Voltage: 1200V

On-Resistance (RDS(ON)): Multiple specifications available including 9.3mΩ, 17.0mΩ, and 18.5mΩ

Topologies: Half-Bridge, Full-Bridge

Operating Junction Temperature: -40°C to 175°C, stable operation across wide temperature range

Optional Configuration: Supports pre-applied thermal interface material (TIM), denoted by suffix ‘-T’

2. Product Features and Core Advantages

- Compact size with high power density: Compact packaging significantly saves PCB space, accommodating space-constrained device designs to facilitate overall miniaturisation and weight reduction;

- Stable output across wide temperature range: Junction temperature coverage from -40°C to 175°C with minimal performance degradation under extreme conditions, delivering excellent consistency in on-resistance and switching parameters;

- Low Loss, High Efficiency: Leveraging TAP chip technology delivers rapid switching and minimal losses, boosting system efficiency by 2%-3% while reducing thermal management demands;

- Easy Integration and Deployment: Industry-compatible pinout enables pin-to-pin replacement of conventional modules, lowering R&D and retrofit costs while accelerating time-to-market.

3. Targeted Application Scenarios

The F Series, with its compact design and high efficiency, targets medium-to-low power high-voltage applications. Core coverage includes: electric vehicle roadside charging points, small-to-medium solar inverters, power conversion systems (PCS), medium-to-low power industrial motor drives, uninterruptible power supplies (UPS), induction heating and welding equipment, and smart grid distributed generation equipment.

III. SiCPAK™ G Series Silicon Carbide Power Modules: The Benchmark for High-Power, High-Reliability Applications

Positioned for high-power, high-reliability applications, the SiCPAK™ G Series employs a large-size package design to enhance current-carrying capacity and thermal performance. Supporting higher power outputs, it is suitable for megawatt-class high-power equipment. Also centred on the 1200V voltage rating, it covers complex topologies including half-bridge, full-bridge, and three-level T-type NPC configurations, serving as a core component in high-power power electronic systems.

1. Core Specifications

Package Dimensions: 56.7mm × 65mm, large-scale high-power design

Rated Voltage: 1200V

On-Resistance (RDS(ON)): Low resistance variants including 4.6mΩ and 9.3mΩ

Topologies: Half-Bridge, Full-Bridge, Three-Level T-NPC (3L-T-NPC)

Operating Junction Temperature: -40°C to 175°C, suitable for high-power, high-temperature applications

Structural Reinforcement: Features high-current crimped terminals, doubling single-terminal current-carrying capacity, compatible with high-current DC busbars and multi-parallel topologies

2. Product Features and Core Advantages

- High Power Handling: Large-size package + low on-resistance chip supports higher continuous and peak currents, suitable for 10kW to MW-class high-power systems;

- Superior Thermal Management & Reliability: Incorporates AlN DBC (Direct Bonded Copper on Aluminium Nitride) substrate for enhanced heat dissipation. Epoxy encapsulation combined with reinforced pin design delivers outstanding vibration and shock resistance, meeting industrial heavy-duty and outdoor long-term operational requirements.

- Broader Topology Adaptability: Supports complex topologies including three-level T-type NPC, catering to high-end applications such as high-power PV inverters, energy storage power stations, and high-voltage motor drives;

- System-Level Cost Optimisation: Low-loss characteristics enable a 50% reduction in magnetic component size, lowering overall material costs while extending equipment lifespan and reducing operational maintenance expenses.

3. Target Application Scenarios

Leveraging its high-power and high-reliability attributes, the G Series primarily targets high-voltage, high-power applications. Core coverage includes:

- High-power DC fast-charging stations for electric vehicles

- Large-scale photovoltaic inverters

- Energy storage station converters

- High-power industrial motor drives

- Rail transit traction systems

- Industrial high-power welding/induction heating equipment

- Smart grid high-voltage substation equipment