company blog about Recycle Nexperia SiC Power Devices:SiC MOSFETs,SIC Schottky Barrier Diodes

Recycle Nexperia SiC Power Devices:SiC MOSFETs,SIC Schottky Barrier Diodes

Shenzhen Mingjiada Electronics Co., Ltd. is a globally renowned electronic component recycling company. Through our professional recycling services, we help clients realise the value of their idle electronic components. With our strong financial standing and comprehensive service system, we have earned the long-term trust and cooperation of numerous manufacturing clients and traders.

Recycling Process:

1. Inventory Classification and Submission of List

Customers should first classify their idle stock, clearly specifying the model, brand, production date, quantity, packaging type and condition. A detailed inventory list may be submitted to our valuation team via email or fax.

2. Professional Valuation and Quotation

Upon receipt of the list, our company will complete a preliminary valuation and provide a quotation within 24 hours.

3. Contract Signing and Logistics Arrangements

Once price negotiations are concluded, a formal recycling contract will be signed to clarify the transaction details.

4. Goods Inspection and Prompt Payment

Upon arrival at our warehouse, the goods will undergo a final quality inspection. Upon passing inspection, payment is guaranteed within three working days to ensure rapid capital recovery. Flexible payment methods include wire transfer, cash, or other arrangements tailored to the client’s requirements.

I. Silicon Carbide MOSFET (SiC MOSFET)

1. Core Technologies and Performance Advantages

SiC MOSFETs are characterised by low loss, high stability and strong reliability, with core technological highlights centred on material processing, packaging design and parameter optimisation:

Exceptional Temperature Stability

Industry-leading RDS (on) temperature stability: within the operating range of 25°C to 175°C, the on-resistance increases by only 38%, far superior to traditional SiC devices (where RDS(on) increases by over 100% following a temperature rise), significantly reducing conduction losses under high-temperature operating conditions.

Ultra-low Switching Losses and High-Speed Switching

Switching losses are significantly lower than those of silicon-based MOSFETs; turn-off losses are unaffected by temperature, supporting high-frequency operation (up to 1 MHz), and meeting the demands of high-power-density and miniaturised designs.

High Robustness and Safety Features

Extremely low gate charge (Qg): Reduces gate drive power consumption, enhances resistance to parasitic conduction, and prevents false triggering.

Ultra-low threshold voltage tolerance: High device consistency ensures greater stability in mass production applications.

High-quality body diode: Low forward voltage and fast reverse recovery reduce turn-on losses.

Strong short-circuit withstand capability: Suitable for demanding industrial and automotive applications.

Innovative Packaging Design

X.PAK Top-Cooled Package (14mm × 18.5mm): Combines the convenience of SMD mounting with the efficient heat dissipation of through-hole packaging; the heat sink is directly connected to the lead frame, improving heat dissipation efficiency by 30%.

D2PAK-7 (SMD), TO-247-3/4 (Through-hole): Covering industrial and automotive-grade applications, suitable for automated mounting and high-power thermal management scenarios.

2. Core Product Series (1200V Mainstream)

Industrial Grade: NSF040120L3A0 (40mΩ), NSF080120L3A0 (80mΩ), TO-247-3 package.

Automotive Grade (AEC-Q101 Certified): NSF030120D7A0-Q (30mΩ), NSF040120D7A1-Q (40mΩ), NSF060120D7A0-Q (60mΩ), D2PAK-7 package.

3. Typical Applications

New Energy Vehicles: On-board chargers (OBC), traction inverters, high-voltage DC-DC converters.

Industrial Power Supplies: Photovoltaic inverters, battery energy storage systems (BESS), UPS, motor drivers.

Charging Infrastructure: Electric vehicle DC fast-charging stations (30kW–120kW).

II. Silicon Carbide Schottky Barrier Diodes (SiC SBD)

1. Core Technology and Performance Advantages

SiC Schottky diodes utilise an MPS (Merged PiN Schottky) structure and ultra-thin SiC substrate technology to address the pain points of traditional SiC diodes, such as poor surge resistance and inadequate heat dissipation:

Zero Recovery Characteristics (Core Advantage)

As a unipolar device with zero reverse recovery charge (Qrr = 0 μC), it eliminates reverse recovery losses, reduces switching losses by 60%, and supports high-frequency (100 kHz–1 MHz) operation.

Temperature-Independent Switching Performance

Switching characteristics remain unaffected by temperature (-55°C to 175°C), with stability under high-temperature conditions far exceeding that of silicon-based FRDs (Fast Recovery Diodes).

High Surge Tolerance and Robustness

The MPS structure significantly enhances IFSM (inrush current) capability, eliminating the need for additional protection circuits and simplifying system design.

Low Losses and Efficient Thermal Management

Low forward voltage drop (VF): reduces conduction losses.

Ultra-thin SiC substrate: only one-third the thickness of conventional substrates, with thermal resistance reduced by 40% and a maximum junction temperature of 175°C.

High Reliability and Easy Parallel Operation

AEC-Q101 certified: suitable for automotive-grade applications.

Positive temperature coefficient: excellent current sharing in multi-device parallel configurations, suitable for high-power applications.

2. Core Product Series (650V/1200V)

650V Industrial Grade: PSC1065K (10A), PSC1665x (16A), DPAK R2P and TO-220-2 packages.

650V Automotive Grade: PSC1065H-Q (10A), DPAK R2P package.

1200V Industrial Grade: PSC20120J/PSC20120L (20A), D2PAK R2P, TO-247 R2P packages.

3. Typical Application Scenarios

Industrial power supplies: Switch-mode power supplies (SMPS), PFC circuits, photovoltaic inverters, UPS.

New energy vehicles: OBC, high-voltage inverters, DC-DC converters.

Data centres / Telecommunications: AI server power supplies, 5G base station power supplies (40% reduction in volume).

Charging infrastructure: Electric vehicle charging stations, energy storage systems.

III. Synergistic Advantages of SiC MOSFETs and SiC SBDs

Maximised system efficiency: The combination of SiC MOSFETs (low switching losses) and SiC SBDs (zero recovery) delivers a 3%–8% efficiency improvement over silicon-based solutions.

High-frequency miniaturisation: Supports high frequencies of 100 kHz–1 MHz, reducing the size of passive components such as inductors and capacitors by 40%–60%.

High-Temperature Reliability: Stable operation at 175°C, suitable for demanding industrial and automotive environments.

System Cost Optimisation: Reduced need for heat dissipation and buffer circuits, resulting in a 15% reduction in BOM costs.

IV. Summary

Nexperia’s silicon carbide power devices offer low loss, high stability, robust reliability and ease of integration as their core competitive advantages, covering all application scenarios including industrial, automotive and renewable energy. SiC MOSFETs address the high-temperature losses and high-frequency limitations of traditional power switches, whilst SiC SBDs significantly reduce system losses through their zero-recovery characteristics. Together, they form high-efficiency, high-power-density, long-life power conversion solutions, establishing themselves as the core choice in the wide-bandgap semiconductor era.