Recycle ON SiC Product:Silicon Carbide Diodes,Silicon Carbide MOSFETs,Silicon Carbide JFETs
Shenzhen Mingjiada Electronics Co., Ltd, as an industry-leading electronic component recycling service provider, focuses on providing professional recycling services for electronic component products for global customers, including IC ICs, 5G chips, new energy ICs, IoT chips, Bluetooth chips, automotive chips, AI ICs, Ethernet ICs, memory chips, sensors, and IGBT modules.
Recycling Process:
If you have stock electronic components to be disposed of, you can send the IC/module inventory to be sold by email. Our company will send professionals to your home to carry out preliminary testing and classification of your inventory of electronic components, and according to the type of recycled components, quantity, quality and other factors to give the corresponding recycling price. If both parties reach an agreement, we can negotiate specific transaction methods for delivery.
1. Silicon Carbide Diode (SiC Diode)
Representative model: FFSHx065/120 series (650V/1200V), FFSHx170 (1700V)
- Technical Characteristics:
- Zero reverse recovery charge (Qrr≈0nC), switching loss 80% lower than silicon FRDs.
- Junction temperature tolerance up to 175°C. Supports high frequency (>100kHz) hard switching topologies.
- Application Scenario:
- Electric Vehicle OBC: Matching full-bridge LLC architecture, efficiency up to 97.5% (vs. 95% for Si-based).
- PV Optimiser: 3x faster MPPT tracking at 1500V system.
2. Silicon Carbide MOSFET (SiC MOSFET)
Flagship products: NVH4L015N170M1 (1700V/15mΩ), NVH4L040N120M1 (1200V/40mΩ)
- Innovative Breakthrough:
- Adoption of dual trench gate technology, with specific on-resistance (Rsp) as low as 2.5mΩ-cm² (industry average 3.8mΩ-cm²).
- Integrated temperature sensor for ±1°C precision junction temperature monitoring, extending life by 30%.
- Strategic Markets:
- Supercharger Pile: Supports 350kW fast charging on 800V platform with a power density of 50kW/L.
- Data centre PSU: Titanium energy efficiency certification (96%+) with PUE optimised to 1.1.
3. Silicon Carbide JFET (SiC JFET)
Unique advantages:
- Normally closed design: Solve traditional JFET drive compatibility issues by cascading (Cascode) SiC JFETs with silicon-based MOSFETs.
- Radiation Resistance: Single Particle Burn-in Threshold (LET) >100MeV-cm²/mg for satellite power systems.
Typical solution: JWSx065 series (650V/5A) for industrial motor drives with dv/dt tolerance up to 100V/ns.
Contact Person: Mr. Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753