company blog about Recycle Qorvo GaN Product:GaN RF Transistor,GaN Switch,GaN Power Amplifier,GaN Front End Module

Recycle Qorvo GaN Product:GaN RF Transistor,GaN Switch,GaN Power Amplifier,GaN Front End Module

Shenzhen Mingjiada Electronics Co., Ltd. is China's leading electronic component recycling service provider, specialising in professional recycling services for various types of electronic components, offering customers efficient, safe, and compliant inventory management solutions.

Recycled product categories: integrated circuit chips, 5G chips, new energy ICs, IoT ICs, Bluetooth ICs, vehicle-to-everything (V2X) ICs, automotive-grade ICs, communication ICs, artificial intelligence (AI) ICs, etc. Additionally, we supply memory ICs, sensor ICs, microcontroller ICs, transceiver ICs, Ethernet ICs, Wi-Fi chips, wireless communication modules, connectors, and other electronic components.

Recycling details:

1. Recycling of electronic materials, idle materials, factory inventory, electronic inventory, personal inventory, etc.

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3. Providing diverse inventory management solutions for customers to choose from. We can either purchase bulk inventory in one go or offer consignment sales.

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Gallium Nitride RF Transistors

Qorvo's gallium nitride RF transistors utilise advanced silicon carbide substrate GaN-on-SiC technology, combining the high electron mobility of GaN material with the excellent thermal conductivity of the SiC substrate, delivering exceptional performance in high-frequency, high-power applications. These devices typically operate across the frequency range from the L-band to the Ka-band (1-40 GHz), with output power reaching hundreds of watts and power added efficiency (PAE) exceeding 60%, significantly outperforming traditional silicon-based LDMOS devices.

Qorvo's GaN RF transistors include:

High-power GaN switches: used in phased array radar systems and electronic warfare equipment, featuring nanosecond-level switching speed and extremely high power handling capability. For example, Qorvo's QPD1000 series GaN switches utilise innovative solderless packaging technology, capable of handling over 100W peak power in the X-band, with insertion loss below 0.5dB and isolation exceeding 35dB.

RF power transistors: Designed for 5G Massive MIMO base stations and satellite communication ground stations, offering high linearity and exceptional thermal stability. A typical example is Qorvo's QPA2211 GaN power transistor, which provides 20W of continuous wave output power at 2.6GHz, with a power gain of 16dB, making it suitable for large-scale array applications.

Gallium Nitride Power Amplifiers

Gallium nitride power amplifiers are a core product category in Qorvo's RF product line, widely used in 5G base stations, microwave backhaul, radar, and electronic countermeasure systems. Compared to traditional solutions, GaN PAs offer wider bandwidth, higher efficiency, and more compact sizes, significantly reducing system power consumption and operational costs.

Qorvo GaN power amplifier types include:

Broadband power amplifiers: Covering multiple octaves, suitable for electronic warfare and multi-functional radar systems. For example, the Qorvo QPA1022 GaN PA provides 10W saturated output power in the 2-18GHz range, with power added efficiency exceeding 30%, and uses a 7x7mm surface-mount package for easy system integration.

High-linearity PAs: Optimised for 5G NR standards, meeting stringent ACPR and EVM requirements. Qorvo's QPA4501 GaN PA is specifically designed for the 3.5 GHz band, delivering 50W peak power at a 100 MHz instantaneous bandwidth with an error vector magnitude (EVM) below 1.5%, making it ideal for large-scale MIMO antenna arrays.

Millimetre-wave front-end modules: Integrated GaN PA, low-noise amplifier (LNA), and switch, operating frequencies extended to the Q-band (30-50GHz). For example, the Qorvo QPF7250 front-end module for 5G FWA (Fixed Wireless Access) terminals includes a high-efficiency GaN PA and a broadband LNA, supporting the 24-30GHz frequency band with an output power of up to 27dBm and a noise figure below 3dB.

GaN Front-End Modules

GaN front-end modules represent a technological breakthrough in system-level integration by Qorvo, integrating GaN power amplifiers, low-noise amplifiers, switches, filters, and control circuits into a single package, significantly simplifying RF system design. Such highly integrated solutions are accelerating adoption in 5G smartphones, small cells, and IoT devices.

Qorvo GaN front-end modules include:

5G millimeter-wave FEM: Supports 5G millimeter-wave bands such as n257/n258/n260, typically using AiP (Antenna in Package) technology for a compact design. For example, the Qorvo QPM2630 millimeter-wave front-end module integrates two transmit channels and one receive channel, operating at frequencies from 24 to 30 GHz, with each TX channel delivering up to 18 dBm output power, making it suitable for smartphones and CPE devices.

Wi-Fi 6/6E Front-End Modules: Combining GaN technology and advanced filtering to meet high-throughput requirements. The Qorvo QPF4526 FEM supports dual-band operation at 2.4 GHz and 5 GHz, integrating a PA, LNA, and switch, with an output power of up to 22 dBm and an EVM better than -35 dB at MCS11 rates, making it an ideal choice for high-end routers and enterprise-grade APs.

Defence and aerospace-grade FEM: Meets extreme environmental reliability requirements, commonly used in satellite communications and military radios. These products typically employ special packaging and screening processes, such as Qorvo's aerospace-grade GaN FEM, which operates over a temperature range of -55°C to +125°C and offers superior radiation resistance.

Gallium Nitride Switching Devices

Gallium nitride switching devices play a critical role in RF signal routing and antenna tuning. Qorvo has developed a series of high-performance switching solutions by combining innovative SOI (Silicon-on-Insulator) with GaN technology.

Qorvo's GaN switching products primarily include:

Antenna Switch Modules (ASM): Integrated with multiple RF switches, filters, and control logic, providing a complete RF front-end solution for mobile devices. Qorvo's GaN ASM products feature low insertion loss (<1 dB typical), high isolation (>30 dB), and excellent linearity (IP3 > 60 dBm), making them ideal for space-constrained 5G smartphones and IoT devices.

Discrete GaN switches: Available in various configurations, including SPDT (single-pole double-throw), SP4T (single-pole four-throw), and MPMT (multi-pole multi-throw), offering greater design flexibility. Qorvo's GaN discrete switches operate from DC to 6 GHz, manufactured using advanced pHEMT technology, featuring fast switching speed (<50 ns), low power consumption (<1 μA standby current), and excellent ESD protection (>1 kV HBM).

Diversity switches: Featuring extremely low insertion loss and excellent isolation performance, these switches significantly enhance the receive sensitivity and throughput of wireless systems. Qorvo's GaN diversity switches are widely used in 5G small cells, Wi-Fi 6/7 routers, and automotive communication systems, supporting carrier aggregation and MIMO technology.