company blog about Recycle Rohm Gate Drivers:Isolated/IGBT/MOSFET/High Side/Low Side Gate Drivers

Recycle Rohm Gate Drivers:Isolated/IGBT/MOSFET/High Side/Low Side Gate Drivers

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I. Product Overview

Leveraging ROHM’s SOI high-voltage integrated circuit process and on-chip micro-transformer isolation technology, we have established a comprehensive product line covering non-isolated high-side and low-side, as well as isolated single- and dual-channel isolated gate driver product lines, fully compatible with power devices such as silicon MOSFETs, IGBTs, third-generation SiC MOSFETs and GaN HEMTs. These products cover a wide range of high- and low-voltage power conversion applications, including industrial frequency conversion, photovoltaic energy storage, automotive electric drive systems, server power supplies, UPS systems and power conversion for humanoid robots.

The product lines are categorised into two main groups based on architecture:

Non-isolated high- and low-side gate drivers (BM60/BS/BD series HVIC): Bootstrap floating-ground architecture, 600V–1200V high-voltage floating-ground withstand voltage, dedicated to half-bridge and three-phase bridge configurations, offering low cost and high integration;

Isolated gate drivers (BM61/BM6GD isolated series): featuring on-chip transformer-based electrical isolation, with insulation withstand voltages of 2500Vrms/3750Vrms; complete separation of high- and low-voltage circuits; suitable for high-voltage safety standards, automotive functional safety, and high-power IGBT/SiC drive applications;

Both product categories support independent high-side and low-side driving, with options for single-channel, dual-channel and three-phase integrated solutions. They incorporate multiple protection features—including UVLO (Undervoltage Lockout), active Miller clamping, overvoltage protection and short-circuit detection—whilst balancing switching efficiency, EMI suppression and long-term operational reliability.

II. Analysis of Core Technical Architecture and Classification

(1) Non-isolated High-side / Low-side Gate Drivers (HVIC Bootstrap Series, for driving IGBTs/MOSFETs)

1. Core Operating Principle

Utilising ROHM’s proven SOI (Silicon-on-Insulator) process, the high-side channel is supplied with a floating power supply via a bootstrap diode and bootstrap capacitor, eliminating the need for an isolated power supply; An integrated high-voltage level-shifting circuit enables the transmission of 3.3V/5V logic signals from the control side to the 1200V high-voltage side. A single chip simultaneously outputs both high-side and low-side drive signals, supporting half-bridge, full-bridge and three-phase inverter topologies, and directly driving N-channel MOSFETs and IGBT power devices.

2. Representative Models and Key Parameters

BM60212FV-C (Automotive-grade 1200V dual-channel high-side and low-side driver)

Floating-ground withstand voltage: 1200V; AEC-Q100 Grade 1 automotive certification; supports functional safety analysis;

Supply voltage range: 10–24V; built-in active Miller clamping and UVLO under-voltage protection;

Typical rise/fall delay: 55 ns; compatible with 3.3 V/5 V MCU logic inputs;

Applications: On-board chargers (OBCs), on-board inverters, and industrial 1200 V IGBT half-bridge circuits.

BS2114F (600 V general-purpose high-side and low-side driver)

Floating-ground withstand voltage: 625 V; output drive current: ±500 mA;

Integrated fixed dead time of 160 ns, power supply UVLO, compact SOP8 package;

Applications: Domestic inverters, small-scale PV micro-inverters, 48V energy storage DC-DC converters.

BD2310G (Single-channel low-side dedicated driver)

Pure low-side architecture, 4 A sink/source current, ultra-compact SSOP5 package;

Logic input 2.0–5.5 V, VCC 4.5–18 V, 15 ns high-speed switching;

Suitable for: low-voltage synchronous rectification, low-side MOSFET/IGBT auxiliary switches, and auxiliary power switch drivers for humanoid robots.

BD67871MWV-Z (Integrated three-phase high-side and low-side driver, TriC3™ active gate driver)

Integrated three half-bridge circuits (6 high-side and low-side drivers), 4.5–60 V wide voltage range;

ROHM’s exclusive TriC3™ dynamic gate current regulation, simultaneously reducing switching losses and EMI ringing;

Built-in comprehensive protection including dead-time, overcurrent, undervoltage and thermal shutdown;

Suitable for: industrial BLDC motors, power tools, and humanoid robot joint servo drives.

3. Product Advantages

High-voltage isolation via SOI process; internal chip insulation eliminates the need for external optocouplers or isolation transformers, reducing BOM costs;

Single-chip integration of high- and low-side dual channels simplifies half-bridge peripheral circuitry and reduces parasitic inductance in PCB routing;

Active Miller clamping suppresses erroneous conduction of Miller current during IGBT/MOSFET turn-off, preventing direct conduction between the upper and lower switches and subsequent device failure;

Available in both automotive and industrial grades, with a wide operating temperature range of –40°C to 125°C, suitable for demanding operating conditions.

(II) Isolated Gate Driver (On-chip transformer isolation, compatible with IGBT/MOSFET/SiC/GaN)

1. Core Operating Principle

Utilising ROHM’s proprietary on-chip micro-transformer integration process, the isolation transformer, signal modulation and demodulation, and high/low-voltage drive circuits are integrated onto a single chip, achieving complete electrical isolation between the control side (low-voltage MCU) and the power side (high-voltage IGBT/SiC). The isolation withstand voltage is up to 3750 Vrms, meeting the UL1577 insulation standard; Dual independent UVLO protection on both the input and output sides ensures there is no common-ground interference between high- and low-voltage circuits, thereby preventing high-voltage crosstalk from damaging the main controller, making it suitable for high-power, high-safety-level equipment.

2. Breakdown of Main Product Lines

(1) BM61S Series (Universal Isolated Drivers for SiC/IGBT, Automotive Grade 3750 Vrms)

Representative models: BM61S40RFV-C (single-channel), BM61S41RFV-C (dual-channel, high-side and low-side)

Isolation withstand voltage of 3750Vrms; AEC-Q100 Grade 1 automotive grade; supports functional safety;

Output drive current of ±4A; secondary-side supply voltage of 16–24V; perfectly matched to the 18V drive voltage of third-generation SiC MOSFETs;

Built-in active Miller clamping, dual-channel input/output UVLO and overvoltage protection (OVP);

Maximum I/O propagation delay of 65 ns, minimum input pulse width of 60 ns, supporting high-frequency switching;

Dual-channel models can directly drive the high-side and low-side power devices of a half-bridge, eliminating the need for two single-channel isolated drivers;

Applications: Automotive main inverters, large-scale commercial and industrial energy storage converters, 1500V photovoltaic inverters, and industrial 1200V SiC power modules.

(2) BM6GD Series (Wide Bandgap GaN Dedicated Isolated Drivers)

Representative model: BM6GD11BFJ-LB

2500Vrms isolation withstand voltage, optimised specifically for high-voltage GaN HEMTs;

Separate gate charge/discharge pins allow independent adjustment of rising and falling edge slopes to suppress high-frequency ringing in GaN;

Supports ultra-high-frequency switching up to 2MHz, capitalising on the high-frequency miniaturisation advantages of GaN devices;

Dual input/output UVLO with narrow pulse response, suitable for high-density server power supplies, fast-charging high-power modules, and high-voltage power conversion units for humanoid robots.

3. Core Advantages of Isolated Products

Maximum safety rating: 3750Vrms high isolation, compliant with PV, energy storage and automotive high-voltage insulation standards, reducing the complexity of safety design;

Leading Integration: On-chip transformers replace external optocouplers and isolated power supplies, significantly simplifying PCB layout and reducing overall unit size;

Optimised for Wide Bandgap Devices: Secondary-side drive voltage ranges cover the drive requirements for 18V SiC, 15V IGBT, 12V Si MOS and 6–10V GaN;

Strong immunity to interference: Transformer isolation eliminates the issues of temperature drift and ageing-induced attenuation associated with optocouplers, offering superior stability under high-temperature and high-frequency operating conditions compared to optocoupler-based drives;

Comprehensive protection across all scenarios: Integrated Miller clamping, dual-channel under-voltage, over-voltage and short-circuit DESAT detection, and fault signal output.

III. General Core Functions (Standard across the entire range of high-side, low-side and isolated drivers)

1. Active Miller Clamping (Active Miller Clamp)

IGBTs and SiC MOSFETs generate Miller currents at the moment of turn-off, which can easily cause erroneous conduction of the opposite-side power device, resulting in a through-short circuit. ROHM’s entire range of gate drivers incorporates a dedicated Miller clamp pin; this forcibly pulls the gate potential low during turn-off, completely eliminating Miller-induced false triggering, significantly enhancing the reliability of half-bridge and three-phase bridge configurations, and reducing the risk of device failure.

2. Dual UVLO Undervoltage Lockout Protection

Non-isolated series: Independent undervoltage detection for high-side and low-side drive power supplies; the output is locked out when voltage is insufficient, preventing power devices from overheating and burning out in the linear region;

Isolated series: Dual UVLO for the control side (primary side) and power side (secondary side); the driver is immediately switched off if the voltage on either side becomes abnormal, whilst simultaneously outputting a fault flag to the MCU.

3. Wide Logic Level Compatibility

All driver inputs support standard 3.3V/5V MCU logic; certain low-voltage models are compatible with 2V low-level inputs, allowing direct interfacing with the full range of Renesas, STM and TI microcontrollers without the need for additional level-shifting chips.

4. Wide Temperature Range for Industrial and Automotive Grades

Industrial grade: –40°C to 105°C; Automotive grade AEC-Q100 Grade 1: –40°C to 125°C, suitable for applications requiring long-term continuous operation such as outdoor photovoltaics, automotive electric drives, industrial servo systems and humanoid robots.

5. Adjustable dead time and short-circuit protection

Three-phase and dual-channel models integrate built-in dead-time circuits, with some models supporting customisation of dead time via external resistors; high-side isolated drivers incorporate DESAT short-circuit detection, enabling soft shutdown during IGBT overcurrent conditions to suppress voltage spikes and protect power devices.

IV. Typical Industry Application Scenarios

New Energy Vehicle Applications

The BM61S41RFV-C isolated dual-channel driver, combined with the BM60212 automotive-grade high-side and low-side drivers, is used in vehicle main drive inverters, on-board chargers (OBCs) and DC-DC boost converters, meeting automotive functional safety and high-voltage insulation requirements.

Photovoltaics and Energy Storage

The 3750Vrms isolated BM61S series drives 1500V string inverters and bidirectional PCS converters for energy storage systems; the isolated architecture eliminates interference caused by a common ground between high- and low-voltage circuits, enhancing the long-term operational stability of power stations.

Industrial Servo and Motor Drives

The BD67871 three-phase integrated high-side and low-side driver, paired with the BS2114F, drives 24–48V industrial BLDC motors, servo motors and power tools; TriC3 technology balances high efficiency with low EMI.

High-Density Switching Power Supplies

The BM6GD11 GaN isolated driver is used in 2MHz high-frequency server power supplies and high-power industrial fast chargers, reducing the size of the system’s magnetic components; The BD2310 low-side driver is used in synchronous rectification circuits.

Humanoid Robot Power Systems

High-voltage bus conversion: The BM61S isolated driver controls SiC power devices to achieve high-voltage DC-DC step-up/step-down conversion from the battery;

Joint servo drives: The BD67871 three-phase high-side and low-side driver controls brushless motors in the joints;

Auxiliary low-voltage power supply: The BD2310 low-side MOSFET driver controls auxiliary switching devices, streamlining the overall BOM and reducing thermal management demands.

UPS, Welding Machines and Industrial Inverters

The 1200V BM60212 high- and low-side driver, paired with the isolated BM61S series, is suitable for high-power IGBT inverter topologies, with multiple protective measures ensuring continuous heavy-duty operation of the equipment.