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company blog about Recycle ST GaN Power IC:Integrated Smart GaN,GaN Drivers,High Voltage GaN Converters

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Recycle ST GaN Power IC:Integrated Smart GaN,GaN Drivers,High Voltage GaN Converters
Latest company news about Recycle ST GaN Power IC:Integrated Smart GaN,GaN Drivers,High Voltage GaN Converters

Recycle ST GaN Power IC:Integrated Smart GaN,GaN Drivers,High Voltage GaN Converters

 

Shenzhen Mingjiada Electronics Co., Ltd., as a leader in the electronic component recycling industry, provides customers with comprehensive electronic component recycling solutions to help them reduce inventory, minimise storage space, lower storage costs, and manage operational expenses.

 

Recycled products include: integrated circuits (ICs), 5G chips, new energy ICs, IoT chips, Bluetooth chips, automotive chips, AI ICs, Ethernet ICs, memory chips, sensors, IGBT modules, and other various electronic components.

 

Specific recycling process:

1. You may categorise your IC/module inventory and label it with model numbers, brands, production dates, quantities, and other relevant information.

2. Please send the inventory list to our evaluation team via fax or email.

3. Once you receive the purchase quotation from our professionals, you may negotiate and agree on specific transaction methods and delivery details.

4. We only recycle from official channels (such as agents, traders, and factories) and do not accept non-official sources.

 

Integrated Smart GaNs

Gallium nitride (GaN) is revolutionizing the power engineering world by enabling high speed, increased efficiency and higher power density never before possible with silicon MOSFETs. Integrating GaN transistors and gate drivers, our advanced MasterGaN systems-in-package offer high efficiency due to their optimized gate drive layout, high power density and increased switching frequency due to minimal parasitic effects.

 

GaN Drivers

The GaN drivers devices are half-bridge gate drivers for enhancement mode GaN FETs or N-channel power MOSFET.

 

High Voltage GaN Converters

The high voltage power converters is enriched by the introduction of GaN HEMT (high-electron-mobility transistor) technology. The use of a GaN transistor leads to higher power density, higher efficiency, higher switching frequency with consequent smaller and lighter PCB, simplifying the design of SMPS and improving the overall performances.

Pub Time : 2025-06-28 12:38:59 >> News list
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