company blog about Recycle TI Power Stages:GaN Power Stages,Si Power Stages

Recycle TI Power Stages:GaN Power Stages,Si Power Stages

Shenzhen Mingjiada Electronics Co., Ltd. has specialised in the field of electronic component recycling for many years and is a leading provider of inventory solutions in China. We offer long-term, high-value cash recycling services for a wide range of electronic components and chips worldwide, providing efficient, secure and transparent inventory clearance and idle stock management services to clients across all stages of the supply chain.

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Full-reel stock: We prioritise the buyback of high-value chips in their original packaging, including full reels and full cartons;

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Any condition: We accept brand-new, unopened products; original loose parts; fully functional components from dismantled equipment; and all types of obsolete stock.

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Requirement Coordination: Clients provide a list of part numbers, quantities, batch numbers and conditions;

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Headquartered in Shenzhen, our business covers both domestic and overseas markets. We support on-site collection, free courier delivery and cross-border transactions. We ensure absolute confidentiality throughout the entire process, safeguarding the privacy of our clients’ supply chains and eliminating any industry-related risks.

TI’s power stage products are divided into two main product lines: GaN integrated power stages and Si (silicon MOSFET) integrated power stages. Both utilise a multi-chip integration solution, incorporating power switches, gate drivers, current sensing and protection circuits within a single device, directly providing a complete switching unit. This significantly reduces the number of external components, simplifies PCB layout, and is suitable for various power conversion scenarios such as server power supplies, industrial power supplies, automotive power systems, humanoid robot power units and telecommunications power supplies.

I. TI GaN Power Stages (Gallium Nitride Integrated Power Stages)

TI GaN power stages are developed using a silicon-based GaN (GaN-on-Si) enhancement-mode GaN FET process and are classified as wide-bandgap power integrated devices. Typical models include the LMG3410R050, LMG5200, LMG708B0 and DRV7308, covering voltage ratings from 80 V to 650 V, with a choice of half-bridge, full-bridge and three-phase IPM architectures.

Key Features

1. Zero reverse recovery charge: GaN FETs do not exhibit the reverse recovery effect present in the body diode of silicon MOSFETs. Switching losses can be reduced by up to 80% compared to traditional silicon MOSFETs, supporting high-frequency switching at the MHz level, reducing the size of inductors and capacitors, and significantly improving power density.

2. Highly integrated on-chip driver: Integrates the GaN power device, gate driver, overcurrent, overtemperature and undervoltage protection, and current sensing into a single package. This eliminates ringing and EMI issues caused by gate loop parasitic inductance in discrete solutions and reduces commissioning complexity.

3. Low parasitic capacitance: With minimal input and output capacitance, switching node ringing is reduced and EMI filtering costs are lowered, making it suitable for topologies such as totem-pole PFC, high-frequency LLC and high-frequency motor inverters.

4. Thoroughly verified reliability: The device has undergone over 40 million hours of accelerated reliability testing; the high-voltage version features comprehensive protection mechanisms, meeting high-reliability requirements such as those for industrial and automotive AEC-Q100 Grade 1 applications.

Typical Applications

AI computing server power supplies, 1U data centre power supplies, automotive on-board chargers (OBCs), industrial high-frequency power supplies, drone power inverters, humanoid robot servo drives, telecommunications base station power supplies, and high-end adaptors.

II. TI Si Power Stages (Integrated Silicon MOSFET Power Stages)

TI Si power stages are based on mature silicon MOSFET processes, integrating high-side and low-side silicon MOSFETs, gate drivers and current sensing circuits. They represent a classic integrated power stage solution for DC-DC step-down applications, targeting medium- and low-voltage, high-current scenarios. They offer a wide range of models, controllable costs and a mature engineering ecosystem.

Key Features

1. Mature silicon-based process: Utilises silicon MOSFETs with optimised on-resistance (Rds(on)), delivering excellent conduction loss performance in medium-to-low voltage and medium-to-low switching frequency applications, with stable supply and a wide range of device options.

2. Integrated half-bridge switching unit: Features a built-in driver, high-side and low-side silicon MOSFETs, and current sensing, designed for buck converters. This eliminates the need for external driver chips and simplifies the design of high-current POL (Point-of-Load) power supplies.

3. Comprehensive protection features: Integrated overcurrent protection, thermal shutdown and undervoltage lockout provide robust protection against abnormal operating conditions such as short circuits and overloads.

4. Frequency limitations: Due to the reverse recovery of the body diode in silicon MOSFETs, the switching frequency is generally limited to within several hundred kHz; as the frequency increases, switching losses rise rapidly, leaving limited scope for improving power density.

Typical Applications

POL (Point-of-Load) power supplies for server motherboards; power supplies for FPGAs and processors; power supplies for industrial control boards; security system power supplies; DC-DC buck converters for consumer electronics; auxiliary power supplies for automation equipment.

III. Comparison of TI GaN Power Stages vs Si Power Stages

1. Switching Frequency

GaN power stages: Can reach the MHz range, supporting high-frequency topologies;

Si power stages: Mainly operate at tens of kHz to several hundred kHz; losses increase significantly at high frequencies.

2. Power Density

GaN power stages: The volume of passive components is significantly reduced, resulting in smaller solution sizes for the same power output;

Si power stages: Passive components are relatively large, resulting in lower power density for the solution;

3. Loss Characteristics

GaN power stages: Extremely low switching losses and zero reverse recovery, suitable for high-frequency, high-voltage applications;

Si power stages: Offer advantages in on-state losses at low frequencies and medium-to-low voltages, but suffer from significant reverse recovery losses at high frequencies.

4. System Cost

GaN power stage: Although the unit price of components is higher, the need for heat sinks, EMI filters, inductors and capacitors is reduced, giving high-frequency, high-voltage complete system solutions a cost advantage;

Si power stages: The components themselves are low-cost, making the overall BOM more economical for low-frequency, medium-to-low-voltage applications.

5. Suitable Topologies

GaN power stages: Totem-pole bridge-less PFC, high-frequency LLC, three-phase motor inverters, high-frequency half-bridge / full-bridge;

Si power stages: Buck converters, traditional Boost converters, low-frequency full-bridge.