company blog about Renesas MOSFET Transistor NP30N06QDK-E1-AY Dual N-Channel Power MOSFET Transistor

Renesas MOSFET Transistor NP30N06QDK-E1-AY Dual N-Channel Power MOSFET Transistor

Product Overviews
NP30N06QDK-E1-AY is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Product Attributes
Product Category: MOSFET
Technology: Si
Package / Case: HSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 30 A
Rds On - Drain-Source Resistance: 14 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 25 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 59 W

Channel Mode: Enhancement

Features
Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Small size package 8-pin HSON dual

Applications
Highly Integrated 100W USB-PD Charger