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SAMSUNG DRAM Memory K3KL3L30DM-BGCU 128Gb Low-Power Dynamic Random Access Memory IC

SAMSUNG DRAM Memory K3KL3L30DM-BGCU 128Gb Low-Power Dynamic Random Access Memory IC

latest company news about SAMSUNG DRAM Memory K3KL3L30DM-BGCU 128Gb Low-Power Dynamic Random Access Memory IC 0

Description

K3KL3L30DM-BGCU is a 128 Gb low-power dynamic random access memory for mobile and in-vehicle devices.

With speeds 1.3 times faster than the previous generation and 20% better power efficiency,premium low-power DRAM LPDDR5X is going beyond mobile - leading the low-power DRAM market further than ever to empower high-performance PCs, servers, and vehicles in all new ways.

Specification
Density:128 Gb
Organization:x64
Speed:8533 Mbps
Voltage:1.8 / 1.05 / 0.9 / 0.5 V
Temperature:-25 ~ 85 °C
Package:496-FBGA

Pub Time : 2024-06-20 10:53:11 >> News list

Contact Details

ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Mr. Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

company blog about SAMSUNG DRAM Memory K3KL3L30DM-BGCU 128Gb Low-Power Dynamic Random Access Memory IC

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