Mingjiada’s Full Product Range of Power MOSFETs for AI Servers
With the explosive growth of AI computing power, power MOSFETs have become the ‘bottleneck components’ in power supply chains.
As large-scale deployments of clusters for training and inference of large models become the norm, the power consumption per cabinet in AI servers has surged from the traditional 10 kW range to the 100 kW range on the GB200 platform, with next-generation platforms targeting 600 kW to 1 MW. Power supply architectures are rapidly transitioning from traditional 12V bus systems to 48V/800V high-voltage DC architectures. As the number of power conversion stages increases and transient currents double, the demand for power MOSFETs and the performance requirements placed upon them are rising significantly. Industry estimates suggest that a single AI server utilises three to five times as many power semiconductors as a traditional server, and the value of power semiconductors in a single AI server cabinet is projected to rise from approximately US$15,000 to US$115,000 by 2030.
Against this backdrop, Shenzhen Mingjiada Electronics Co., Ltd., an authorised independent distributor with nearly three decades of experience in the electronic components supply chain, leverages its dual warehousing centres in Shenzhen and Hong Kong and a supply capacity of 2 million stock-keeping units (SKUs) to provide a full range of power MOSFETs from leading international brands—including Infineon, ON Semiconductor, STMicroelectronics, Vishay, ROHM and Renesas—for AI server power supply designs.
Core Power MOSFET Product Series for AI Servers Supplied by Mingjiada
I. Infineon: Full-chain coverage from PFC to IBC
Infineon boasts the most comprehensive product portfolio within the AI server power supply chain. Mingjiada supplies the following core series from stock:
OptiMOS™ 5/6/7 Series (medium-to-low voltage, 25V–250V): Covers the core requirements of multi-phase buck converters and intermediate bus converters (IBCs). Among these, the OptiMOS™ 6 80V MOSFET, featuring a 5×6mm² dual-sided heat-dissipating package, has been integrated into the IBC tier of AI server platforms by leading processor manufacturers. The latest generation of OptiMOS™ 7 products is optimised for IBC applications, with RDS(on) reduced by 25 per cent for the 40V variant and by 40 per cent for the 80V/100V variants compared to the previous generation. Mingjiada maintains a stock of popular AI server IBC models such as the BSC050N10NS5 (100V/5mΩ).
CoolMOS™ C7/C8 series (high voltage, 600V–950V): Suitable for the PFC and LLC stages of AI server CRPS power supplies. CoolMOS™ 8 utilises .XT interconnect technology and offers industry-leading thermal performance, making it particularly suitable for high-power-density power supply designs in both traditional and AI servers. The typical model SPW20N60C3 (650V/20.7A) is widely used in industrial power supplies and server PFC circuits.
CoolSiC™ 400V Series (dedicated to AC/DC stages): Infineon’s 400V SiC MOSFETs, based on second-generation CoolSiC™ technology, are specifically developed for the AC/DC stages of AI servers, enabling power densities exceeding 100W/in³ and PFC stage efficiencies of 99.5 per cent.
StrongIRFET™ series: Positioned as a cost-effective solution for medium and low-voltage applications, with a VBRDSS of up to 100V, an RDS(on) as low as 1.2mΩ, and a maximum ID of 282A, it is suitable for applications such as auxiliary power supplies and load switches in AI servers.
II. ON Semiconductor: PowerTrench® T10 + EliteSiC™ Combined Solution
ON Semiconductor’s AI server power supply solutions are characterised by a ‘silicon-based + silicon carbide’ dual-line configuration. The latest-generation T10 PowerTrench® series utilises a shielded-gate trench design, optimised specifically for high-current applications in DC-DC power conversion stages, delivering higher power density and exceptional thermal performance within a compact package. When used in combination with the T10 series, the EliteSiC™ 650V M3S MOSFET reduces gate charge by 50% and output capacitive energy by 44% compared to the previous generation, thereby reducing data centre power losses by approximately 1 per cent. Furthermore, ON Semiconductor has launched a 12kW AI cloud computing power module utilising an M3S MOSFET and SiC JFET solution, achieving a peak efficiency of up to 98 per cent for the entire unit.
Mingjiada stocks On Semiconductor’s EliteSiC series of SiC MOSFETs (covering the full voltage range from 650V to 1700V), as well as PowerTrench series single N-channel power MOSFETs such as the NVMFS5C404NL and NVMFS5C456NL, and supports both small-batch samples and large-volume orders.
III. Vishay: TrenchFET® Gen V Low On-Resistance Solution
The Vishay SiRS5700DP is a 150V TrenchFET® Gen V N-channel power MOSFET housed in a PowerPAK® SO-8S (QFN 6×5) package, featuring an RDS(on) as low as 5.6 mΩ and a quality factor (RDS(on) × Qg) of just 336 mΩ·nC, RthJC as low as 0.45°C/W, and a continuous drain current of up to 144 A. This device is specifically designed to meet the efficiency requirements of 6 kW AI server power supply systems and is suitable for synchronous rectification, DC/DC converters, hot-swap switches and OR-ing functions. Typical applications include AI servers, edge computing and supercomputers. Mingjiada offers immediate availability of the SiRS5700DP and the full range of Vishay TrenchFET power MOSFETs.
IV. ROHM: MOSFETs specifically designed for 48V hot-swap applications in AI servers
ROHM has launched the 100V power MOSFETs RY7P250BM and RS7P200BM for 48V power supply hot-swap circuits in AI servers. The RY7P250BM achieves an SOA tolerance of up to 16 A at VDS = 48 V and a pulse width of 10 ms, and up to 50 A at 1 ms, with an on-resistance as low as 1.86 mΩ. It strikes an industry-leading balance between a wider SOA range and lower on-resistance, and has been certified and recommended by globally renowned cloud platforms. The RS7P200BM achieves an industry-leading wide SOA range in a compact 5.0 mm × 6.0 mm package, meeting the demands of high-density power supply designs. Mingjiada has long supplied ROHM N-channel power MOSFETs and SiC MOSFET products, including models such as the RCX450N20 (200 V/45 A).
V. STMicroelectronics (ST): MDmesh™ and STripFET™ Series
ST’s power MOSFETs cover a wide breakdown voltage range from –100 V to 1,700 V, achieving low gate charge and low on-resistance through the MDmesh™ high-voltage series and the STripFET™ low-voltage series. A typical model, the STW48N60M6 (600 V/48 A, 0.060 Ω), is suitable for the PFC stage of AI servers and high-voltage DC/DC conversion. In terms of SiC MOSFETs, ST’s products with an extended voltage range of 650V–2200V feature ultra-high-temperature capability (TJ up to 200°C) and extremely low switching losses, providing a silicon carbide alternative for high-efficiency AC/DC stages in AI servers.
Mingjiada’s Supply Assurance
Genuine Products and Extensive Stock: Mingjiada distributes products from over 500 semiconductor manufacturers worldwide; all power MOSFETs are genuine, factory-sealed products, with batch traceability services provided. Our dual warehousing centres in Shenzhen and Hong Kong maintain a stock of 2 million different part numbers, supporting a rapid ‘order today, dispatch tomorrow’ response.
Flexible Procurement and Global Delivery: We support both small-batch sample purchases (starting from a single unit) and production line orders in the millions, meeting full-cycle requirements from AI server power supply prototyping to mass production ramp-up. Through our branches in Hong Kong, Japan, Russia and elsewhere, we support DHL/UPS international shipping to ensure rapid global delivery.
Contact Mingjiada: Official website www.integrated-ic.com| Service hotline +86 13410018555 (Mr Chen) | Email sales@hkmjd.com
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