company blog about Silicon Carbide MOSFET C2M0280120D SIC MOSFET 1200V RDS ON 280 mOhm

Shenzhen Mingjiada Electronics Co.,Ltd.New and Original Sale Silicon Carbide MOSFET C2M0280120D Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Benefits

• Higher system efficiency
• Lower cooling requirements
• Increased power density
• Increased system switching frequency

Product Attributes (C2M0280120D)
Manufacturer: Wolfspeed
Product Category: Silicon Carbide MOSFETs
Channel Mode: Enhancement
Configuration: Single
Fall-off time: 9.9 ns
Forward transconductance - min: 2.8 S
Id-continuous drain current: 10 A
Maximum operating temperature: + 150 C
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-247-3
Pd-Power Dissipation: 62.5 W
Product type: SiC MOSFETS
Qg-Gate charge: 5.6 nC
Rds On-drain on-resistance: 280 mOhms
Rise time: 7.6 ns
Factory Package Quantity: 30
Technology: SiC
Trade name: Z-FET
Transistor polarity: N-Channel
Typical Off Delay Time: 10.8 ns
Typical turn-on delay time: 5.2 ns
Vds - drain-source breakdown voltage: 1.2 kV
Vgs - gate-source voltage: - 10 V, + 25 V
Vgs th - gate-source threshold voltage: 2.8 V
Unit weight: 6 g

Actual order can be discussed in detail, welcome to contact Mr Chen:
Tel：+86 13410018555
Email：sales@hkmjd.com
Home URL:www.hkmjd.com