company blog about 【SK hynix Memory IC】HMAA8GR7CJR4N-XN：Low Power High-Speed Registered DDR4 SDRAM DIMMs

【SK hynix Memory IC】HMAA8GR7CJR4N-XN：Low Power High-Speed Registered DDR4 SDRAM DIMMs

HMAA8GR7CJR4N-XN Registered DDR4 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) is low power, high-speed operation memory modules that use DDR4 SDRAM devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems such as servers and workstations.

Specifications of HMAA8GR7CJR4N-XN
Memory Capacity：64GB
Memory Technology：DDR4 SDRAM
Product Voltage：1.2V
RAM Speed：3200 MHz
RAM Standard：DDR4-3200/PC4-25600
Error Identifying：ECC
Signal Type：Registered
Column Access Strobe (CAS)：CL22
Rank：Dual Rank x4
Quantity of Pins：288-pin
RAM Genre：RDIMM

Feature of HMAA8GR7CJR4N-XN
Power Supply: VDD=1.2V (1.14V to 1.26V)
VDDQ= 1.2V (1.14V to 1.26V)
VPP- 2.5V (2.375V to 2.75V)
VDDSPD=2.25V to 2.75V
16 internal banks
Data transfer rates: PC4-3200, PC4-2933, 2666, PC4-2400, PC4-2133, PC4-1866, PC4- 1600
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
DBI (Data Bus Inversion) is supported(x8)
CA parity (Command/Address Parity) mode is supported