company blog about ST STL26N60DM6 High-Voltage N-Channel 600V 15A MDmesh DM6 Power MOSFET Transistors

ST STL26N60DM6 High-Voltage N-Channel 600V 15A MDmesh DM6 Power MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd. is a globally renowned distributor of electronic components, supplying the STL26N60DM6 high-voltage N-channel MOSFET transistor. Employing advanced MDmesh DM6 technology, it delivers outstanding switching performance and energy efficiency in 600V high-voltage applications.

The STL26N60DM6 high-voltage N-channel 600V, 15A power MOSFET is particularly suited for applications demanding high efficiency and fast switching, such as electric vehicle charging stations, telecommunications equipment power converters, and solar inverters.

【MDmesh DM6 Technology Highlights】

The MDmesh DM6 series represents the cutting edge of modern high-voltage power MOSFET technology, deeply optimised for high-efficiency converters and bridge topologies.

Compared to previous generations, DM6 technology delivers significant improvements in on-resistance per unit area, alongside reduced gate charge and superior switching characteristics.

The core advantage of this technology lies in its optimised capacitance configuration and specialised lifetime suppression process.

This enables the DM6 series MOSFETs to combine multiple benefits: low gate charge (Qg), low recovery charge (Qrr), and short recovery time (trr), making them particularly suitable for high-frequency switching circuits.

MDmesh DM6 devices undergo 100% avalanche testing to ensure reliability under extreme operating conditions and incorporate Zener protection for exceptional dv/dt tolerance.

These characteristics make DM6 series products like the STL26N60DM6 ideal for bridge topologies and ZVS phase-shift converters.

【STL26N60DM6 Product Overview】

The STL26N60DM6 is an N-channel power MOSFET housed in a PowerFlat™ (8x8) HV surface-mount package.

Rated for 600V drain-source voltage and capable of handling 15A continuous drain current, it delivers a maximum power dissipation of 110W at 25°C.

The STL26N60DM6 exhibits a maximum on-resistance of just 215 milliohms (at 7.5A current and 10V gate voltage).

This low on-resistance directly translates to higher energy efficiency and reduced thermal output, enabling stable operation in high-power applications.

The MOSFET features a maximum gate threshold voltage of 4.75V (at 250μA test conditions) and a gate operating voltage range of ±25V.

The STL26N60DM6 exhibits a gate charge (Qg) of 24 nC (at 10 V gate voltage) and a maximum input capacitance (Ciss) of 940 pF (at 100 V drain-source voltage).

These parameters ensure the STL26N60DM6 achieves rapid switching while facilitating driver circuit design.

The STL26N60DM6 operates over a wide junction temperature range from -55°C to 150°C, enabling adaptation to diverse demanding environmental conditions.

【Technical Advantages and Features of STL26N60DM6】

One of the STL26N60DM6's most notable advantages is its fast recovery body diode characteristics.

Compared to previous generations, DM6 technology achieves a significant reduction in on-resistance per unit area while maintaining extremely low switching losses.

The device also exhibits exceptional dv/dt robustness, with a peak diode recovery voltage slope of 100V/ns and MOSFET dv/dt endurance equally reaching 100V/ns.

The STL26N60DM6 undergoes 100% avalanche testing to ensure reliability under extreme operating conditions.

A Zener protection structure provides an additional safety barrier, while an extra drive source pin optimises switching performance.

These features collectively make the STL26N60DM6 an ideal choice for the most demanding high-efficiency applications, particularly those requiring handling of high dynamic dv/dt in applications and topologies.

【STL26N60DM6 Application Areas】

The STL26N60DM6 is suitable for a wide range of power switching applications, particularly where high efficiency and fast switching are critical.

In electric vehicle charging stations, the STL26N60DM6's high-voltage capability and fast switching characteristics make it an ideal choice for the power conversion section.

For telecommunications equipment or data centre power converters, the STL26N60DM6's high efficiency and robustness ensure stable system operation.

In solar inverter applications, the STL26N60DM6's fast recovery diode characteristics contribute to enhanced energy conversion efficiency.

The STL26N60DM6 is particularly suited for topologies requiring stable, reliable diode handling of dynamic dv/dt, such as full-bridge and half-bridge configurations, as well as zero-voltage switching (ZVS) phase-shift converters.

Furthermore, the STL26N60DM6 can be employed in various high-efficiency switch-mode power supply designs, offering engineers a solution that meets stringent energy efficiency standards while maintaining system reliability.