Shenzhen Mingjiada Electronics Co., Ltd. [Supply] FF4000UXTR33T2M1 (Infineon) Silicon Carbide MOSFET Modules: 3.3kV XHP™ 2 CoolSiC™ MOSFET Half-Bridge Modules
FF4000UXTR33T2M1: XHP 2 CoolSiC™ MOSFET Half-Bridge Modules are designed for high performance and reliability. These modules feature a voltage rating of 3300V, nominal current of 500A, and repetitive peak current of 1000A, with an operational junction temperature of up to +175°C.
FF4000UXTR33T2M1: The modules offer low switching losses and high current density, enabled by a low inductive design. Mechanically, the modules provide high power density in a package with a Comparative Tracking Index (CTI) greater than 600, ensuring high creepage and clearance distances. An AlSiC base plate enhances thermal cycling capabilities, making these modules ideal for demanding applications.
Specification Of FF4000UXTR33T2M1
Product Category: MOSFET Modules
Technology: SiC
Mounting Style: Screw Mount
Package / Case: XHP 2
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 3.3 kV
Id - Continuous Drain Current: 500 A
Rds On - Drain-Source Resistance: 4.8 mOhms
Vgs - Gate-Source Voltage: - 7 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4.3 V
Pd - Power Dissipation: 20 mW
Series: XHP 2
Fall Time: 60 ns
Product Type: MOSFET Modules
Rise Time: 125 ns
Subcategory: Discrete and Power Modules
Tradename: XHP CoolSiC
Type: Power Module
Typical Turn-Off Delay Time: 240 ns
Typical Turn-On Delay Time: 300 ns
Vf - Forward Voltage: 4.6 V
Features Of FF4000UXTR33T2M1
• Electrical features
- VDSS = 3300 V
- IDN = 500 A / IDRM = 1000 A
- Tvj,op = 175°C
- Low switching losses
- High current density
- Low inductive design
• Mechanical features
- High power density
- Package with CTI > 600
- High creepage and clearance distances
- AlSiC base plate for increased thermal cycling capability
- AlN substrate with low thermal resistance
Potential Applications Of FF4000UXTR33T2M1
• Traction drives
• High-power converters
• High-frequency switching application
Diagrams Of FF4000UXTR33T2M1
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FF4000UXTR33T2M1: XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3kV, 4.0mΩ with .XT interconnection technology for decarbonizing transportation.
Product Attributes Of FF4000UXTR33T2M1
Series: XHP™2
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
FF4000UXTR33T2M1 - Summary Of Features
CoolSiC™ MOSFET 3.3 kV
Integrated body diode
XHP™ 2 housing
.XT interconnection technology
Benefits Of FF4000UXTR33T2M1
Energy efficiency
High power density
Enhanced lifetime
Applications Of FF4000UXTR33T2M1
Energy Storage Systems
Hydrogen electrolysis
Photovoltaic
Traction
Company URL: https://www.integrated-ic.com/
FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
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