Supply [Infineon] IGT60R190D1SATMA1 N-Channel MOSFET Transistors, Supply Diodes, Thyristors, Transistors, Power Driver Modules
Supply MOSFET Transistors
IGT60R190D1SATMA1 - 600V CoolGaN™ enhancement-mode Power Transistor
FET Type
|
N-Channel
|
Technology
|
GaNFET (Gallium Nitride)
|
Drain to Source Voltage (Vdss)
|
600 V
|
Current - Continuous Drain (Id) @ 25°C
|
12.5A (Tc)
|
Vgs(th) (Max) @ Id
|
1.6V @ 960µA
|
Vgs (Max)
|
-10V
|
Input Capacitance (Ciss) (Max) @ Vds
|
157 pF @ 400 V
|
Power Dissipation (Max)
|
55.5W (Tc)
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
Mounting Type
|
Surface Mount
|
Supplier Device Package
|
PG-HSOF-8-3
|
Package / Case
|
8-PowerSFN
|
Base Product Number
|
IGT60R190
|
Features
Enhancement mode transistor – Normally OFF switch
Ultra fast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Benefits
Improves system efficiency
Improves power density
Enables higher operating frequency
System cost reduction savings
Reduces EMI
FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Mr. Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753