Shenzhen Mingjiada Electronics Co., Ltd. [Original Stock] supplies the IPD90P03P4L-04, a high-performance P-channel automotive-grade power MOSFET developed by Infineon. It is packaged in a DPAK (TO-252-3) package and belongs to the OptiMOS™-P2 series of products. This MOSFET is widely favoured in automotive electronics and industrial applications due to its outstanding performance and reliability.
Product Overview
The IPD90P03P4L-04 is a P-channel enhancement-mode power MOSFET designed for high-side switching in automotive and industrial applications. As a flagship product of Infineon's OptiMOS™-P2 series, the IPD90P03P4L-04 employs advanced semiconductor process technology to achieve extremely low on-resistance and superior switching performance.
The IPD90P03P4L-04 has a rated drain-source voltage of -30V, a continuous drain current of up to -90A, and a maximum on-resistance of just 4.5mΩ (typical value 3.0mΩ @ VGS=10V). These outstanding parameters make the IPD90P03P4L-04 an ideal choice for high-power-density applications. Notably, the IPD90P03P4L-04 has undergone 100% avalanche testing, ensuring reliability in harsh operating environments.
The IPD90P03P4L-04 complies with the AEC-Q101 automotive-grade certification standard, with a wide operating temperature range of -55°C to +175°C, meeting the high-temperature operating requirements of automotive electronic systems. The IPD90P03P4L-04 uses an environmentally friendly packaging design, compliant with RoHS standards and lead-free, meeting the environmental requirements of modern electronic products.
Key Features
The IPD90P03P4L-04 boasts several outstanding features that set it apart from its peers:
Extremely low on-resistance: The IPD90P03P4L-04 has a typical RDS(on) of just 3.0mΩ at VGS=10V, with a maximum value not exceeding 4.5mΩ. This feature significantly reduces conduction losses and improves system efficiency. The IPD90P03P4L-04's low on-resistance makes it particularly suitable for high-current applications.
High current capability: The IPD90P03P4L-04 has a continuous drain current (Id) of up to 90A and a pulse current capability of up to 360A, meeting the requirements of most high-power applications. The IPD90P03P4L-04's high current handling capability ensures stable performance in high-current applications such as motor drives.
Fast switching performance: The IPD90P03P4L-04 features fast switching speeds, with a rise time of just 11ns and a fall time of 40ns, helping to reduce switching losses and improve overall system efficiency. The IPD90P03P4L-04's low gate charge (Qg) characteristic (typical value of 125nC@10V) further optimises switching performance.
No charge pump required for high-side drive: As a P-channel MOSFET, the IPD90P03P4L-04 does not require additional charge pump circuits in high-side drive applications, simplifying system design. This feature makes the IPD90P03P4L-04 an ideal choice for high-side switches in bridge circuits.
Enhanced reliability: The IPD90P03P4L-04 has undergone 100% avalanche testing, features a wide safe operating area (SOA), and is packaged in an MSL1-grade package capable of withstanding peak reflow temperatures up to 260°C. The robust package design provides excellent thermal performance and mechanical protection.
Automotive-grade certification: The IPD90P03P4L-04 complies with the AEC-Q101 standard, specifically designed for automotive applications, meeting the high reliability requirements of automotive electronics. This feature makes the IPD90P03P4L-04 the preferred device for automotive power management and motor drive systems.
Product Specifications
Model: IPD90P03P4L-04
Product Type: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: DPAK-3 (TO-252-3)
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source On-Resistance: 4.1 mOhms
Vgs - Gate-Source Voltage: - 16 V, + 5 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Qg - Gate Charge: 125 nC
Minimum Operating Temperature: - 55 °C
Maximum operating temperature: +175°C
Pd - Power dissipation: 137 W
Applications
IPD90P03P4L-04 is primarily used in the automotive electronics field, serving as a high-side MOSFET in motor bridges (such as half-bridge, H-bridge, three-phase motor, etc.) to drive and control motors. Additionally, it is suitable for battery reverse protection circuits, effectively preventing damage to circuits caused by reverse battery connection and ensuring the safe and reliable operation of automotive electronic systems. It can also be applied in automotive DC-DC converters, onboard chargers, power management systems, etc., providing stable power supply and control for various electrical devices in vehicles.
Contact Information
Contact Person: Mr. Chen
Phone: +86 13410018555
Email: sales@hkmjd.com
Website: www.integrated-ic.com/
Your message must be between 20-3,000 characters!
